The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate na...The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.展开更多
We calculate the concurrence and spin squeezing parameter of three atoms induced by a coherent field. It shows that when the mean numbers of photon of the field is very small, concurrence exhibits a certain kind of ap...We calculate the concurrence and spin squeezing parameter of three atoms induced by a coherent field. It shows that when the mean numbers of photon of the field is very small, concurrence exhibits a certain kind of approximative periodic vibration. With the increase of the mean numbers of photon, its periodicity will be interrupted. As for the relationship between the concurrence and spin squeezing, numeric result shows that under Dick model, spin squeezing serves as a sufficient but not necessary condition for concurrence.展开更多
文摘The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.
文摘We calculate the concurrence and spin squeezing parameter of three atoms induced by a coherent field. It shows that when the mean numbers of photon of the field is very small, concurrence exhibits a certain kind of approximative periodic vibration. With the increase of the mean numbers of photon, its periodicity will be interrupted. As for the relationship between the concurrence and spin squeezing, numeric result shows that under Dick model, spin squeezing serves as a sufficient but not necessary condition for concurrence.
