The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calc...The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.展开更多
The quality of the perovskite light absorption layer plays a dynamic role in the photovoltaic properties of solar cells.The existing methods to prepare methylammonium lead iodide(MAPbI3)films render substantial struct...The quality of the perovskite light absorption layer plays a dynamic role in the photovoltaic properties of solar cells.The existing methods to prepare methylammonium lead iodide(MAPbI3)films render substantial structural defect density,particularly at the grain boundaries and film surface,constituting a challenge that hinders the further optoelectronic enhancement of perovskite solar cells.Herein,a unique approach was introduced:using a simple ethylammonium chloride(EACl)additive in perovskite precursor mixture to produce high-quality MAPbI3 thin films.The results indicated that EACl could encourage perovskite crystal growth without experiencing the intermediate phase formation and would evaporate from the perovskite after annealing.Additionally,a gradient perovskite structure was achieved using this technique,which impressively enhanced the performance of the perovskite films.A high power conversion efficiency(PCE)of 20.03%was achieved under the optimal amount of EACl,and the resultant efficient device could retain over 89%of the original PCE after aging for 1000 h at room temperature.This novel technique leads to a facile fabrication of highquality and less-defect perovskite thin films for competent and stable devices.展开更多
文摘The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.
基金supported by the National Key R&D Program of China(2019YFB1503202)the 111 Project(B16016)+1 种基金the National Natural Science Foundation of China(51702096,U1705256 and 61904053)the Fundamental Research Funds for the Central Universities(2019MS026,2019MS027 and 2020MS080)。
文摘The quality of the perovskite light absorption layer plays a dynamic role in the photovoltaic properties of solar cells.The existing methods to prepare methylammonium lead iodide(MAPbI3)films render substantial structural defect density,particularly at the grain boundaries and film surface,constituting a challenge that hinders the further optoelectronic enhancement of perovskite solar cells.Herein,a unique approach was introduced:using a simple ethylammonium chloride(EACl)additive in perovskite precursor mixture to produce high-quality MAPbI3 thin films.The results indicated that EACl could encourage perovskite crystal growth without experiencing the intermediate phase formation and would evaporate from the perovskite after annealing.Additionally,a gradient perovskite structure was achieved using this technique,which impressively enhanced the performance of the perovskite films.A high power conversion efficiency(PCE)of 20.03%was achieved under the optimal amount of EACl,and the resultant efficient device could retain over 89%of the original PCE after aging for 1000 h at room temperature.This novel technique leads to a facile fabrication of highquality and less-defect perovskite thin films for competent and stable devices.
