The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design.The analysis shows that the L-type network has better frequency characteristics than the T-type one...The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design.The analysis shows that the L-type network has better frequency characteristics than the T-type one.A distribution amplifier based on the L-type network is implemented with the 2-μm GaAs HBT（heterojunction-bipolar transistor） process of WIN semiconductors.The measurement result presents excellent bandwidth performance and gives a gain of 5.5 dB with a gain flatness of ±1dB over a frequency range from 3 to 18 GHz.The return losses S11 and S22 are below-10dB in the designed frequency range.The output 1-dB compression point at 5 GHz is 13.3 dBm.The chip area is 0.95 mm2 and the power dissipation is 95 mW under a 3.5 V supply.展开更多
基金China Postdoctoral Science Foundation (No.20090461048)Postdoctoral Science Foundation of Jiangsu Province (No.0901022C)Postdoctoral Science Foundation of Southeast University
文摘The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design.The analysis shows that the L-type network has better frequency characteristics than the T-type one.A distribution amplifier based on the L-type network is implemented with the 2-μm GaAs HBT（heterojunction-bipolar transistor） process of WIN semiconductors.The measurement result presents excellent bandwidth performance and gives a gain of 5.5 dB with a gain flatness of ±1dB over a frequency range from 3 to 18 GHz.The return losses S11 and S22 are below-10dB in the designed frequency range.The output 1-dB compression point at 5 GHz is 13.3 dBm.The chip area is 0.95 mm2 and the power dissipation is 95 mW under a 3.5 V supply.
