A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving ...A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving 50 ft transmission lines and a pair of feedback networks for offset cancellation. At a positive supply voltage of 2 V and a negative supply voltage of - 2V, the power dissipation is about 280 mW. The small-signal gain is higher than 46 dB and the input dynamic range is about 40 dB with a constant single-ended output voltage swing of 400 mV. Satisfactory eye-diagrams are obtained at the bit rate of 12 Gbit/s limited by the test set-up. The chip area is 1.15 mm ×0.7 mm.展开更多
A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and sin...A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and single-ended to differential conversion.The mixers are implemented in 0.18μm CMOS process.The measured results are given to show their performance.展开更多
A monolithic 10GHz LC voltage-controlled oscillator （VCO） is implemented in standard 0.25μm CMOS technology. The VCO adopts an optimized symmetric circular inductor with center-tap, an accumulation-mode MOS （A-MOS...A monolithic 10GHz LC voltage-controlled oscillator （VCO） is implemented in standard 0.25μm CMOS technology. The VCO adopts an optimized symmetric circular inductor with center-tap, an accumulation-mode MOS （A-MOS） varactor in series with a passive metal-isolator-metal capacitor （MIM-CAP） and a tail current source with an LC filter to operate with high-frequency and low-noise resulting in - 103.2dBc/Hz at 1MHz offset from carrier frequency of 10.2GHz and approximately 11.5% tuning range. With a 3.3V supply voltage, the core circuit consumes 9.9mW. The chip area is 0.67mm × 0.58mm.展开更多
This paper presents a 155Mbps limiting amplifier for STM-1 systems of SDH optical communication. It is implemented in CSMC 0.5μm CMOS technology. Under a supply voltage of 3.3V, it has a power consumption of 198mW. T...This paper presents a 155Mbps limiting amplifier for STM-1 systems of SDH optical communication. It is implemented in CSMC 0.5μm CMOS technology. Under a supply voltage of 3.3V, it has a power consumption of 198mW. The core of the circuit is composed of 6 cascaded amplifiers that are in a conventional structure of differential pairs,an output buffer, and a DC offset cancellation feedback loop. The small signal gain can be adjusted from 74 to 44dB by an off-chip resistor. The chip was packaged before being tested. The experimental results indicate that the circuit has an input dynamic range of 54dB and provides a single-ended output swing of 950mV. Its output eye diagram remains satisfactory when the pseudo-random bit sequence （PRBS） input speed reaches 400Mbps.展开更多
An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices...An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices,and mutually compensatory circuitry technology is also employed to double the output current furthermore.The simulation results using Hspice simulation software,show that the output currents of a single unit circuit and two unit circuits connected in a mutually compensatory manner of the improved converter is about 12.5mA and 26mA,respectively.The power conversion efficiency of the mutually compensatory circuit can amount to 73%,while its output voltage ripple is less than 1.5%.The converter is fabricated in standard Rohm 0.35μm CMOS technology in Tokyo University of Japan.The test result indicates that the output current of 9.8mA can be obtained from a single unit circuit of the improved converter.展开更多
A new architecture of CMOS low voltage downconve rsion mixer is presented.With 1.452GHz LO input and 1.45GHz RF input,simulation results show that the conversion gain is 15dB,IIP3 is -4.5dBm,NF is 17dB,the maximum tra...A new architecture of CMOS low voltage downconve rsion mixer is presented.With 1.452GHz LO input and 1.45GHz RF input,simulation results show that the conversion gain is 15dB,IIP3 is -4.5dBm,NF is 17dB,the maximum transient power dissipation is 9.3mW,and DC power dissipation is 9.2mW.The mixer’s noise and linearity analyses are also presented.展开更多
A 30Gbit/s receptor module is developed with a CMOS integrated receiver chip（IC） and a GaAs-based 1 × 12 photo detector array of PIN-type. Parallel technology is adopted in this module to realize a high-speed r...A 30Gbit/s receptor module is developed with a CMOS integrated receiver chip（IC） and a GaAs-based 1 × 12 photo detector array of PIN-type. Parallel technology is adopted in this module to realize a high-speed receiver module with medium speed devices. A high-speed printed circuit board（PCB） is designed and produced. The IC chip and the PD array are packaged on the PCB by chip-on-board technology. Flip chip alignment is used for the PD array accurately assembled on the module so that a plug-type optical port is built. Test results show that the module can receive parallel signals at 30Gbit/s. The sensitivity of the module is - 13.6dBm for 10^-13 BER.展开更多
A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring...A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring the charge-to-mass ratio of gas molecules. Structures of silicon beam resonators are designed, simulated, and optimized. This gas sensor is fabricated using sacrificial layer microelectronmechanical system technology, and the resonant frequency of the microbeam is measured.展开更多
Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied...Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.展开更多
There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commerci...There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commercial 3.3/ 5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops. High current and highvoltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different laydut parameters and 19V for the pMOS transistors are achieved. This paper also presents the insulation technology and characterization results for these high-voltage devices.展开更多
[Objective] The aim was to analyze sugar components in fermented rice wine by ion chromatography. [Method] The optimal condition for chromatography system of sugar analysis was selected by measuring sugars in fermente...[Objective] The aim was to analyze sugar components in fermented rice wine by ion chromatography. [Method] The optimal condition for chromatography system of sugar analysis was selected by measuring sugars in fermented rice wine with ion chromatography and pulsed amperometric detection. [Result] The optimal measurement conditions were as follows： Leacheate （Leachate）, consisting of NaOH and CH3COONa, was eluted by gradient concentrations, with column temperature at 35 ℃ and flow rate at 0.4 ml/min. In the condition, sugars in rice wine were ana- lyzed and the results showed that the method is featured by low detection limit, good repetition and high recovery rate. [Conclusion] The research establishes and determines the approaches and optimum conditions for sugar analysis in rice wine by ion chromatography and pulsed amperometric detection, providing references for advancement of research on quality improvement of fermented rice wine.展开更多
文摘A 12 Gbit/s limiting amplifier for fiber-optic transmission system is realized in a 2μm GaAs HBT technology. The whole circuit consists of an input buffer, three similar amplifier cells, an output buffer for driving 50 ft transmission lines and a pair of feedback networks for offset cancellation. At a positive supply voltage of 2 V and a negative supply voltage of - 2V, the power dissipation is about 280 mW. The small-signal gain is higher than 46 dB and the input dynamic range is about 40 dB with a constant single-ended output voltage swing of 400 mV. Satisfactory eye-diagrams are obtained at the bit rate of 12 Gbit/s limited by the test set-up. The chip area is 1.15 mm ×0.7 mm.
文摘A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and single-ended to differential conversion.The mixers are implemented in 0.18μm CMOS process.The measured results are given to show their performance.
文摘A monolithic 10GHz LC voltage-controlled oscillator （VCO） is implemented in standard 0.25μm CMOS technology. The VCO adopts an optimized symmetric circular inductor with center-tap, an accumulation-mode MOS （A-MOS） varactor in series with a passive metal-isolator-metal capacitor （MIM-CAP） and a tail current source with an LC filter to operate with high-frequency and low-noise resulting in - 103.2dBc/Hz at 1MHz offset from carrier frequency of 10.2GHz and approximately 11.5% tuning range. With a 3.3V supply voltage, the core circuit consumes 9.9mW. The chip area is 0.67mm × 0.58mm.
文摘This paper presents a 155Mbps limiting amplifier for STM-1 systems of SDH optical communication. It is implemented in CSMC 0.5μm CMOS technology. Under a supply voltage of 3.3V, it has a power consumption of 198mW. The core of the circuit is composed of 6 cascaded amplifiers that are in a conventional structure of differential pairs,an output buffer, and a DC offset cancellation feedback loop. The small signal gain can be adjusted from 74 to 44dB by an off-chip resistor. The chip was packaged before being tested. The experimental results indicate that the circuit has an input dynamic range of 54dB and provides a single-ended output swing of 950mV. Its output eye diagram remains satisfactory when the pseudo-random bit sequence （PRBS） input speed reaches 400Mbps.
文摘An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices,and mutually compensatory circuitry technology is also employed to double the output current furthermore.The simulation results using Hspice simulation software,show that the output currents of a single unit circuit and two unit circuits connected in a mutually compensatory manner of the improved converter is about 12.5mA and 26mA,respectively.The power conversion efficiency of the mutually compensatory circuit can amount to 73%,while its output voltage ripple is less than 1.5%.The converter is fabricated in standard Rohm 0.35μm CMOS technology in Tokyo University of Japan.The test result indicates that the output current of 9.8mA can be obtained from a single unit circuit of the improved converter.
文摘A new architecture of CMOS low voltage downconve rsion mixer is presented.With 1.452GHz LO input and 1.45GHz RF input,simulation results show that the conversion gain is 15dB,IIP3 is -4.5dBm,NF is 17dB,the maximum transient power dissipation is 9.3mW,and DC power dissipation is 9.2mW.The mixer’s noise and linearity analyses are also presented.
文摘A 30Gbit/s receptor module is developed with a CMOS integrated receiver chip（IC） and a GaAs-based 1 × 12 photo detector array of PIN-type. Parallel technology is adopted in this module to realize a high-speed receiver module with medium speed devices. A high-speed printed circuit board（PCB） is designed and produced. The IC chip and the PD array are packaged on the PCB by chip-on-board technology. Flip chip alignment is used for the PD array accurately assembled on the module so that a plug-type optical port is built. Test results show that the module can receive parallel signals at 30Gbit/s. The sensitivity of the module is - 13.6dBm for 10^-13 BER.
文摘A new silicon beam resonator design for a novel gas sensor based on simultaneous conductivity and mass change measurement is investigated. High selectivity and sensitivity in gas detection can be obtained by measuring the charge-to-mass ratio of gas molecules. Structures of silicon beam resonators are designed, simulated, and optimized. This gas sensor is fabricated using sacrificial layer microelectronmechanical system technology, and the resonant frequency of the microbeam is measured.
文摘Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.
文摘There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commercial 3.3/ 5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops. High current and highvoltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different laydut parameters and 19V for the pMOS transistors are achieved. This paper also presents the insulation technology and characterization results for these high-voltage devices.
基金Supported by Changsha Key Project in Hunan Province(K1005007-21)~~
文摘[Objective] The aim was to analyze sugar components in fermented rice wine by ion chromatography. [Method] The optimal condition for chromatography system of sugar analysis was selected by measuring sugars in fermented rice wine with ion chromatography and pulsed amperometric detection. [Result] The optimal measurement conditions were as follows： Leacheate （Leachate）, consisting of NaOH and CH3COONa, was eluted by gradient concentrations, with column temperature at 35 ℃ and flow rate at 0.4 ml/min. In the condition, sugars in rice wine were ana- lyzed and the results showed that the method is featured by low detection limit, good repetition and high recovery rate. [Conclusion] The research establishes and determines the approaches and optimum conditions for sugar analysis in rice wine by ion chromatography and pulsed amperometric detection, providing references for advancement of research on quality improvement of fermented rice wine.
