The rate equation model is setup for the signal gain, pump absorption and output noise spectrum of bidirectional EDFA (Bi EDFA) including numbers of signals, pumps of arbitrary direction, amplified spontaneous emissi...The rate equation model is setup for the signal gain, pump absorption and output noise spectrum of bidirectional EDFA (Bi EDFA) including numbers of signals, pumps of arbitrary direction, amplified spontaneous emission (ASE) and inherent loss. The influence of erbium doped fiber length, input signal power, pump style and pump power on the gain characteristics of Bi EDFA is analyzed. Forward and backward noise figure for different pump style versus bidirectional input signal power is investigated.展开更多
A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achie...A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.展开更多
A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier （LNA） and a passive mixer with no external balun for near-zero-IF （Intermediate Frequency）/RF （Radio Frequency） applications are described. The ...A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier （LNA） and a passive mixer with no external balun for near-zero-IF （Intermediate Frequency）/RF （Radio Frequency） applications are described. The LNA, fabricated in the 0.18μm 1P6M CMOS technology, adopts a gain-switched technique to increase the linearity and enlarge the dynamic range. The mixer is an IQ-based passive topology. Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50Ω. Combining LNA and mixer, the front-end measured performances in high gain state are： -15dB of Sll, 18.5dB of voltage gain, 4.6dB of noise figure, 15dBm of IIP3, 85dBm to -10dBm dynamic range. The full circuit drains 6mA from a 1.8V supply.展开更多
文摘The rate equation model is setup for the signal gain, pump absorption and output noise spectrum of bidirectional EDFA (Bi EDFA) including numbers of signals, pumps of arbitrary direction, amplified spontaneous emission (ASE) and inherent loss. The influence of erbium doped fiber length, input signal power, pump style and pump power on the gain characteristics of Bi EDFA is analyzed. Forward and backward noise figure for different pump style versus bidirectional input signal power is investigated.
文摘A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.
文摘A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier （LNA） and a passive mixer with no external balun for near-zero-IF （Intermediate Frequency）/RF （Radio Frequency） applications are described. The LNA, fabricated in the 0.18μm 1P6M CMOS technology, adopts a gain-switched technique to increase the linearity and enlarge the dynamic range. The mixer is an IQ-based passive topology. Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50Ω. Combining LNA and mixer, the front-end measured performances in high gain state are： -15dB of Sll, 18.5dB of voltage gain, 4.6dB of noise figure, 15dBm of IIP3, 85dBm to -10dBm dynamic range. The full circuit drains 6mA from a 1.8V supply.
