An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates o...An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm.min^-1 and 0.5 nm.min^-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.展开更多
文摘An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm.min^-1 and 0.5 nm.min^-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.
