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手性1-β-羧乙基杂氮锗三环类化合物的合成
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作者 陶春元 吕群 帅敏 《有机化学》 SCIE CAS CSCD 北大核心 2003年第7期717-719,共3页
采用固相合成的方法,首次合成(4S)-1-β-羧乙基-4-羧基杂氮锗三环(1),(4S)-3-甲基1-β-羧乙基-4-羧基杂氮锗三环(2)和(4S)-1-β-羧乙基-4-羧基-2-硫代杂氮锗三环(3).并运用元素分析,IR,1H NMR,MS进行了表征.
关键词 手性1-β-羧乙基杂氮锗三环类化合物 回相合成 元素分析 表征 结构分析 抗癌活性
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COMPARISON OF SIGMA-DELTA MODULATOR FOR FRACTIONAL-N PLL FREQUENCY SYNTHESIZER
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作者 Mao Xiaojian Yang Huazhong Wang Hui 《Journal of Electronics(China)》 2007年第3期374-379,共6页
This paper investigates the design of digital Sigma-Delta Modulator (SDM) for fractional-N frequency synthesizer. Characteristics of SDMs are compared through theory analysis and simulation. The curve of maximum-loop-... This paper investigates the design of digital Sigma-Delta Modulator (SDM) for fractional-N frequency synthesizer. Characteristics of SDMs are compared through theory analysis and simulation. The curve of maximum-loop-bandwidth vs. maximum-phase-noise is suggested to be a new criterion to the performance of SDM,which greatly helps designers to select an appropriate SDM structure to meet their real application requirements and to reduce the cost as low as possible. A low-spur 3-order Mul-tistage Noise Shaping (MASH)-1-1-1 SDM using three 2-bit first-order cascaded modulators is proposed,which balances the requirements of tone-free and maximum operation frequency. 展开更多
关键词 FRACTIONAL-N Frequency synthesizer Phase Locked Loop (PLL) Sigma-Delta Modulator(SDM)
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Uniform single-layer graphene growth on recyclable tungsten foils
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作者 Zhiyu Zou Xiuju Song +3 位作者 Ke Chen Qingqing Ji Yanfeng Zhang Zhongfan Liu 《Nano Research》 SCIE EI CAS CSCD 2015年第2期592-599,共8页
To meet the rising demand of graphene in electronics and optoelectronics, developing an efficient synthesis strategy for effective control of the layer thickness is highly necessary. Herein, we report the synthesis of... To meet the rising demand of graphene in electronics and optoelectronics, developing an efficient synthesis strategy for effective control of the layer thickness is highly necessary. Herein, we report the synthesis of strictly single- layer graphene on the foil of an early transition metal, tungsten (W), via a simple chemical vapor deposition route. The cracking of hydrocarbons is facilitated by the catalytically active metal surface of W, while the subsequent two-dimensional growth is mediated by the carbide-forming ability within the underlying bulk, leading to the formation of uniform monolayer graphene. The as-grown graphene layers can be transferred onto target substrates rapidly through the recently developed electrochemical method, which also allows for reuse of the substrates at least five times without introducing quality deteriora- tion. Moreover, considering the refractory nature of W foils, a complementary component of nickel is added, by means of which the growth temperature of graphene can be significantly reduced. In brief, a highly-efficient and low-cost synthesis route has been developed for the growth of graphene towards large-area uniformity, single-layer thickness and high crystalline quality. 展开更多
关键词 GRAPHENE chemical vapor deposition single layer TUNGSTEN CARBIDE recyclable substrate
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