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Trench VDMOS制造流程中多晶相关工艺问题研究 被引量:1
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作者 赵文魁 马万里 《电子与封装》 2014年第7期26-28,共3页
Trench VDMOS的制造流程中,要进行多晶的淀积、回蚀、清洗,其效果的好坏会直接影响到器件的电学参数,诸如Vth、Igss等。在淀积工艺中,要重点控制沉积速率、炉管清洁周期,防止产生沟槽内多晶膜层出现缝隙以及沟槽外多晶层出现凸起。在回... Trench VDMOS的制造流程中,要进行多晶的淀积、回蚀、清洗,其效果的好坏会直接影响到器件的电学参数,诸如Vth、Igss等。在淀积工艺中,要重点控制沉积速率、炉管清洁周期,防止产生沟槽内多晶膜层出现缝隙以及沟槽外多晶层出现凸起。在回蚀工序,要重点控制刻蚀反应物,防止造成多晶残留。清洗工序,通过选择不含水分的溶剂,避免大量水痕缺陷的产生。 展开更多
关键词 沟槽 VDMOS 多晶 淀积 回蚀 清洗 栅源极漏电
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Recovery of copper from simulated ammoniacal spent etchant using sterically hindered beta-diketone 被引量:4
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作者 梁文 胡慧萍 +2 位作者 付翁 叶婷 陈启元 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第8期1840-1846,共7页
The solvent extraction of copper from simulated ammoniacal spent etchant with 1-(4'-dodecyl)-phenyl-3-tertiary butyl-1,3-octadione(HR) was studied,and a model of extraction isotherm was proposed and verified with... The solvent extraction of copper from simulated ammoniacal spent etchant with 1-(4'-dodecyl)-phenyl-3-tertiary butyl-1,3-octadione(HR) was studied,and a model of extraction isotherm was proposed and verified with equilibrium extraction constant.The influence of equilibration time,extractant concentration and phase ratio on the extraction of copper was studied at(298±0.5) K.For the spent etching solutions containing 112.98 g/L Cu,6 mol/L NH3 and 1 mol/L NH4+,the optimal solvent extraction condition of copper was obtained in one-stage solvent extraction at phase ratio of 5:4 with 40% HR in sulphonated kerosene for 5 min.The copper concentration in the raffinate decreased to 63.24 g/L and raffinate can be favorably recycled to the etching solution.The stripping studies were carried out with the simulated copper spent electrolyte containing 30 g/L Cu and 180 g/L H2SO4.The stripping ratio is 98.27% from the loaded organic phase after one-stage stripping at phase ratio of 1:2 at(298±0.5) K. 展开更多
关键词 spent ammoniacal etchant copper recovery solvent extraction BETA-DIKETONE
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Selective removal technology using chemical etching and excimer assistance in precision recycle of color filter 被引量:1
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作者 Pai-shan PA 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第A01期210-214,共5页
Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical et... Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost. 展开更多
关键词 chemical etching excimer light selective removal technology display color filter
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