A new SOI （Silicon On Insulator） high voltage device with Step Unmovable Surface Charges （SUSC） of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are impleme...A new SOI （Silicon On Insulator） high voltage device with Step Unmovable Surface Charges （SUSC） of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson＇s equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF （REduce SURface Field） condition of the SOl device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3pro-thick top Si layer, 2pro-thick buried oxide layer and 70pro-length drift region using a linear doping profile of unmovable buried oxide charges.展开更多
The formation of metastable alumina phases due to the oxidation of commercial FeCralloy（R） rods （0.5 mm thickness） at various temperatures and time periods has been examined. This structured layer acts as an ancho...The formation of metastable alumina phases due to the oxidation of commercial FeCralloy（R） rods （0.5 mm thickness） at various temperatures and time periods has been examined. This structured layer acts as an anchor to bind additional coatings of alumina via wash-coat techniques, thereby improving the layer thickness and increasing adhesion of the catalytic surface. Optimisation of the layer thickness and catalytic properties were conducted, using a range of analytical systems [scanning electron microscope （SEM）, energy dispersive X-ray （EDX） and X-ray diffraction （XRD）]. The modified FeCralloy（R） rods were tested in a fixed bed reactor rig to assess the impact on yield for the dehydrogenation of methylcyclohexane.展开更多
基金Supported by the National Natural Science Foundation of China (No.60276040).
文摘A new SOI （Silicon On Insulator） high voltage device with Step Unmovable Surface Charges （SUSC） of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson＇s equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF （REduce SURface Field） condition of the SOl device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3pro-thick top Si layer, 2pro-thick buried oxide layer and 70pro-length drift region using a linear doping profile of unmovable buried oxide charges.
文摘The formation of metastable alumina phases due to the oxidation of commercial FeCralloy（R） rods （0.5 mm thickness） at various temperatures and time periods has been examined. This structured layer acts as an anchor to bind additional coatings of alumina via wash-coat techniques, thereby improving the layer thickness and increasing adhesion of the catalytic surface. Optimisation of the layer thickness and catalytic properties were conducted, using a range of analytical systems [scanning electron microscope （SEM）, energy dispersive X-ray （EDX） and X-ray diffraction （XRD）]. The modified FeCralloy（R） rods were tested in a fixed bed reactor rig to assess the impact on yield for the dehydrogenation of methylcyclohexane.
