An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper i...An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.展开更多
Exchange bias between ferromagnetic and antiferromagnetic layers has been widely utilized in spintronic devices.Controlling the exchange bias in magnetic multilayers by an electric field(E-field)has been proposed as a...Exchange bias between ferromagnetic and antiferromagnetic layers has been widely utilized in spintronic devices.Controlling the exchange bias in magnetic multilayers by an electric field(E-field)has been proposed as a low-power solution for manipulating the macroscopic properties such as exchange bias fields and magnetization values,while how the magnetic domains respond to the E-fields has rarely been reported in an exchange-biased system.Here,we realize the vector imaging of reversible electrical modulation of magnetization reversal in exchange-biased CoFeB/IrMn/PMN-PT(011)multiferroic heterostructures,utilizing in-situ quantitative magneto-optical Kerr effect(MOKE)microscopy.Under the electrical control,magnetic domains at-80 Oe rotate reversibly between around 160°and 80°-120°,whose transverse components reverse from 225°to 45°correspondingly.Moreover,pixel-by-pixel comparisons are conducted to further imply the reversible magnetization reversal by E-fields.Efield-induced reversible magnetization reversal is also demonstrated without applying external magnetic fields.Vector imaging of electrical manipulation of exchange bias is of great significance in understanding the magnetoelectric effect and the development of next-generation spintronic devices.展开更多
文摘An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.
基金supported by the National Key R&D Program of China(2018YFB0407601)the National Natural Science Foundation of China(91964109,62071374 and 51802248)the National 111 Project of China(B14040).
文摘Exchange bias between ferromagnetic and antiferromagnetic layers has been widely utilized in spintronic devices.Controlling the exchange bias in magnetic multilayers by an electric field(E-field)has been proposed as a low-power solution for manipulating the macroscopic properties such as exchange bias fields and magnetization values,while how the magnetic domains respond to the E-fields has rarely been reported in an exchange-biased system.Here,we realize the vector imaging of reversible electrical modulation of magnetization reversal in exchange-biased CoFeB/IrMn/PMN-PT(011)multiferroic heterostructures,utilizing in-situ quantitative magneto-optical Kerr effect(MOKE)microscopy.Under the electrical control,magnetic domains at-80 Oe rotate reversibly between around 160°and 80°-120°,whose transverse components reverse from 225°to 45°correspondingly.Moreover,pixel-by-pixel comparisons are conducted to further imply the reversible magnetization reversal by E-fields.Efield-induced reversible magnetization reversal is also demonstrated without applying external magnetic fields.Vector imaging of electrical manipulation of exchange bias is of great significance in understanding the magnetoelectric effect and the development of next-generation spintronic devices.
