基于场态效应的产业网络演化模型——兼论传统产业升级和新兴产业培育模式

在产业转型与战略性新兴产业培育背景下,研究产业网络演化具有重要意义。从场理论视角,界定产业网络的场源、场力和场势等场态特征,提出产业网络场的概念。进而分析产业网络的物理形态和虚拟形态,研究产业网络两种形态的演化机理与交互作用。结合场态特征与产业网络形态,将场态效应对产业网络演化的带动作用分为6种模式,分别探讨6种模式下的产业网络演化路径,明晰其对传统产业升级和新兴产业培育的作用。最后,剖析场态作用下的传统产业升级模式和新兴产业培育模式,为中国产业网络建设和转型升级提供理论借鉴。

A Novel Fully-Depleted Dual-Gate MOSFET

A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.

Levitation of Extended States in a Random Magnetic Field with a Finite Mean

We study the localization properties of electrons in a two-dimensional system in a random magnetic field with the average and the amplitude of the magnetic field fluctuations δB. The localization length of the system is calculated by using the finite-size scaling method combined with the transfer-matrix technique. In the case of weak δB, we find that the random magnetic field system is equivalent to the integer quantum Hall effect system, namely, the energy band splits into a series of disorder broadened Landau bands, at the centers of which states are extended with the localization length exponent . With increasing δB, the extended states float up in energy, which is similar to the levitation scenario proposed for the integer quantum Hall effect.

Static and Dynamic Scaling Relationships for Moderate and Small Earthquakes in the Yunnan Region

Source spectra for moderate and small earthquakes are obtained after removing the path effect, site effect, and instrument response, etc. in the observed S-wave spectra. Based on the Brune source model and by means of genetic algorithm, the source parameters including seismic moment, stress drop, source dimension, etc. are determined, the radiated seismic energy for small-to-moderate earthquakes is measured with consideration of underestimation and compensation brought forth by limited bandwidth of the instrument, and the scaling relationships of static and dynamic parameters for earthquakes

Transient near tip fields in crack dynamics

Transient effects of stress-strain fields in the vicinity of a stationary crack tip under high rate loads are discussed.Exact analytical solutions to near tip stresses are compared to fields prescribed by leading terms(one or several) of Williams asymptotic expansion.Influence of load application mode,time(or,which is the same,distance from a crack tip) and Poisson's ratio on this discrepancy is extensively examined.Some effects connected with crack tip propagation speed are also discussed.Significant inconsistencies between real(or received in numerical solutions of state equations-e.g.finite element computations) crack tip fields and stress intensity factor(SIF) singular field observed by numerous researchers are explained.The scope of problems where SIF field can be used for correct prediction of dynamic stress-strain fields in the crack tip region is established.Possibility to correctly approximate fields that are not SIF dominated,accounting additional terms of Williams expansion,is studied.

A new pathway towards all-electric spintronics:electric-field control of spin states through surface/interface effects

Manipulation of spin states via purely electric means forms the research branch "all-electric spintronics".In this paper,we briefly review recent progress relating to the all-electric spintronics,including electric-field control of Rashba spin-orbit coupling,magnetic anisotropy,exchange bias,ferromagnetism,and other forms of magnetoelectric coupling.Special focus is given to surface/interface systems,including semiconductor(oxide) heterostructures,magnetic/nonmagnetic surfaces,semiconductor-metal interfaces,and other nanostructures,which can be good candidates for functional materials for spintronic.

Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits

Single-event transient pulse quenching （Quenching effect） is employed to effectively mitigate WSET （SET pulse width）. It en- hanced along with the increased charge sharing which is norm for future advanced technologies. As technology scales, param- eter variation is another serious issue that significantly affects circuit＇s performance and single-event response. Monte Carlo simulations combined with TCAD （Technology Computer-Aided Design） simulations are conducted on a six-stage inverter chain to identify and quantify the impact of charge sharing and parameter variation on pulse quenching. Studies show that charge sharing induce a wider WSET spread range. The difference of WSET range between no quenching and quenching is smaller in NMOS （N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor） simulation than that in PMOS＇ （P-Channel Met- N-Oxide-Semiconductor Field-Effect Transistor）, so that from parameter variation view, quenching is beneficial in PMOS SET mitigation. The individual parameter analysis indicates that gate oxide thickness （TOXE） and channel length variation （XL） mostly affect SET response of combinational circuits. They bring 14.58% and 19.73% average WSET difference probabilities for no-quenching cases, and 105.56% and 123.32% for quenching cases.