In this work, we study the relativistic oscillators in a noncommutative space and in a magnetic field. It is shown that the effect of the magnetic field may compete with that of the noncommutative space and that is ab...In this work, we study the relativistic oscillators in a noncommutative space and in a magnetic field. It is shown that the effect of the magnetic field may compete with that of the noncommutative space and that is able to vanish the effect of the noncommutative space.展开更多
The invariant, propagator, and wavefunction for a variable frequency harmonic oscillator in an electromagnetic field are obtained by making a specific coordinate transformation and by using the method of phase space p...The invariant, propagator, and wavefunction for a variable frequency harmonic oscillator in an electromagnetic field are obtained by making a specific coordinate transformation and by using the method of phase space path integral method. The probability amplitudes for a dissipative harmonic oscillator in the time varying electric field are obtained.展开更多
We study the Klein-Gordon oscillator in commutative, noncommutative space, and phase space with psudoharmonic potential under magnetic field hence the other choice is studying the Klein-Gordon equation oscillator in t...We study the Klein-Gordon oscillator in commutative, noncommutative space, and phase space with psudoharmonic potential under magnetic field hence the other choice is studying the Klein-Gordon equation oscillator in the absence of magnetic field. In this work, we obtain energy spectrum and wave function in different situations by NU method so we show our results in tables.展开更多
We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric ...We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.展开更多
文摘In this work, we study the relativistic oscillators in a noncommutative space and in a magnetic field. It is shown that the effect of the magnetic field may compete with that of the noncommutative space and that is able to vanish the effect of the noncommutative space.
文摘The invariant, propagator, and wavefunction for a variable frequency harmonic oscillator in an electromagnetic field are obtained by making a specific coordinate transformation and by using the method of phase space path integral method. The probability amplitudes for a dissipative harmonic oscillator in the time varying electric field are obtained.
文摘We study the Klein-Gordon oscillator in commutative, noncommutative space, and phase space with psudoharmonic potential under magnetic field hence the other choice is studying the Klein-Gordon equation oscillator in the absence of magnetic field. In this work, we obtain energy spectrum and wave function in different situations by NU method so we show our results in tables.
基金The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy （DE-FG02-04ER46175）. D. Tham gratefully acknowledges support by the KAUST Scholar Award.
文摘We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.
