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基于BP神经网络的套筒式串联推力轴承组均载性能及承载能力细化研究 被引量:3
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作者 林桂强 毕超 +1 位作者 江波 张冰 《工程塑料应用》 CAS CSCD 北大核心 2012年第7期50-53,共4页
为完善套筒式串联推力轴承组优化设计理论,为大型、高端推力轴承组国产化提供理论支持,利用有限元数值模拟方法,对轴承组进行静态力学分析,研究轴承组几何设计参数对其均载性能和承载能力的影响。通过BP神经网络建立轴承组几何设计参数... 为完善套筒式串联推力轴承组优化设计理论,为大型、高端推力轴承组国产化提供理论支持,利用有限元数值模拟方法,对轴承组进行静态力学分析,研究轴承组几何设计参数对其均载性能和承载能力的影响。通过BP神经网络建立轴承组几何设计参数与轴承组均载率的数学模型,并用于轴承组的优化设计。对部分理论研究内容进行了实验验证,并进行了误差分析。 展开更多
关键词 套筒式串联推力轴承组 均载率 有限元模拟 BP神经网络
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Fog Computing Dynamic Load Balancing Mechanism Based on Graph Repartitioning 被引量:8
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作者 SONG Ningning GONG Chao +1 位作者 AN Xingshuo ZHAN Qiang 《China Communications》 SCIE CSCD 2016年第3期156-164,共9页
Because of cloud computing's high degree of polymerization calculation mode, it can't give full play to the resources of the edge device such as computing, storage, etc. Fog computing can improve the resource ... Because of cloud computing's high degree of polymerization calculation mode, it can't give full play to the resources of the edge device such as computing, storage, etc. Fog computing can improve the resource utilization efficiency of the edge device, and solve the problem about service computing of the delay-sensitive applications. This paper researches on the framework of the fog computing, and adopts Cloud Atomization Technology to turn physical nodes in different levels into virtual machine nodes. On this basis, this paper uses the graph partitioning theory to build the fog computing's load balancing algorithm based on dynamic graph partitioning. The simulation results show that the framework of the fog computing after Cloud Atomization can build the system network flexibly, and dynamic load balancing mechanism can effectively configure system resources as well as reducing the consumption of node migration brought by system changes. 展开更多
关键词 fog computing graph partitioning load balancing
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Rate-dependent inhomogeneous creep behavior in metallic glasses
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作者 Hong WU Feng XU +8 位作者 Jun-ye REN Xiao-dong LAN Yong YIN Lu-xin LIANG Min SONG Yong LIU Jia LI Qing-xiang LI Wei-dong HUANG 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2021年第6期1758-1765,共8页
Creep deformation can be classified as homogeneous flow and inhomogeneous flow in bulk metallic glass(BMG).In order to understand the conversion conditions of the two types of creep deformation,the effect of loading r... Creep deformation can be classified as homogeneous flow and inhomogeneous flow in bulk metallic glass(BMG).In order to understand the conversion conditions of the two types of creep deformation,the effect of loading rate on the creep behavior of a Ti_(40)Zr_(10)Cu_(47)Sn_(3)(at.%)BMG at ambient temperature was investigated using nanoindentation and molecular dynamic simulation.Results indicate that at low loading rates,many serrations appear in loading stage,leading to inhomogeneous serrated flow in the creep stage.When the loading rate is high enough,the creep deformation tends to be homogeneous.The related mechanism responsible for the rate-dependent creep behavior is attributed to the number of pre-existing major shear bands which is influenced significantly by the loading rate. 展开更多
关键词 metallic glasses NANOINDENTATION loading rate inhomogeneous creep shear band
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CVD synthesis of nitrogen-doped graphene using urea 被引量:1
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作者 ZHANG CanKun LIN WeiYi +4 位作者 ZHAO ZhiJuan ZHUANG PingPing ZHAN LinJie ZHOU YingHui CAI WeiWei 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2015年第10期94-99,共6页
This work provides an effective low-cost synthesis and in-depth mechanistic study of high quality large-area nitrogen-doped graphene(NG) films. These films were synthesized using urea as nitrogen source and methane as... This work provides an effective low-cost synthesis and in-depth mechanistic study of high quality large-area nitrogen-doped graphene(NG) films. These films were synthesized using urea as nitrogen source and methane as carbon source, and were characterized by scanning electron microscopy(SEM), Raman spectroscopy and X-ray photoelectron spectroscopy(XPS). The N doping level was determined to be 3.72 at.%, and N atoms were suggested to mainly incorporated in a pyrrolic N configuration. All distinct Raman peaks display a shift due to the nitrogen-doping and compressive strain. The increase in urea concentration broadens the D and 2D peak's Full Width at Half Maximum(FWHM), due to the decrease of mean free path of phonons. The N-doped graphene exhibited an n-type doping behavior with a considerably high carrier mobility of about 74.1 cm2/(V s), confirmed by electrical transport measurements. 展开更多
关键词 nitrogen-doped graphene chemical vapor deposition Raman spectroscopy X-ray photoemission spectroscopy
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