The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency char...The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.展开更多
A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher...A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.展开更多
Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied...Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.展开更多
Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follo...Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.展开更多
Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emi...Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.展开更多
The monolithic integration of vertical-cavity surface-emitting lasers (VCSEL) with photodetectors is very important in the application of free-space optical interconnects.Theoretical and experimental results on the re...The monolithic integration of vertical-cavity surface-emitting lasers (VCSEL) with photodetectors is very important in the application of free-space optical interconnects.Theoretical and experimental results on the resonant-cavity-enhanced (RCE) photodetector with VCSEL Structure are presented.The compatible requirement in input mirror reflectivity between the VCSEL and the RCE detector is achieved by precisely etching the top mirror.In this way,the RCE detector with relatively high quantum efficiency and necessary optical bandwidth has been obtained.[KH8/9D]展开更多
High slope efficiency and high power selected oxide-confined 850nm VCSELs grown by MOCVD are reported.The slope efficiency and the threshold current respectively are 0 82mW/mA and 2 59mA with a 9μm diameter oxidati...High slope efficiency and high power selected oxide-confined 850nm VCSELs grown by MOCVD are reported.The slope efficiency and the threshold current respectively are 0 82mW/mA and 2 59mA with a 9μm diameter oxidation aperture at 25℃.The maximum power of 16mW is obtained at 23mA current bias.The minimum threshold current can be as low as 570μA with a 5μm diameter oxidation aperture at 25℃.The maximum saturated power is 5 5mW.展开更多
The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors （DBR） is studied by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Some voids distribute along t...The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors （DBR） is studied by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers. These voids decrease the shrinkage of the Al2O3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers. With the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. As a result,the oxide quality is better.展开更多
In this paper, we present a simple thermal model of Vertical-Cavity Surface-Emitting Laser （VCSEL） light-current （L1） characteristics based on the rate-equation. The model can be implemented in conventional SPICE-...In this paper, we present a simple thermal model of Vertical-Cavity Surface-Emitting Laser （VCSEL） light-current （L1） characteristics based on the rate-equation. The model can be implemented in conventional SPICE-like circuit simulators, including HSPICE, and be used to simulate the key features of VCSEL. The results compare favorably with experimental data from a device reported in the literature. The simple empirical model is especially suitable for Computer Aided Design （CAD）, and greatly simplifies the design of optical communication systems.展开更多
We propose a vertical cavity semiconductor emitting laser(VCSEL)using a coupled-cavity(CC)design to broaden the bandwidths of gain and delay spectra.The structure is formed by constructing a passive cavity coupled wit...We propose a vertical cavity semiconductor emitting laser(VCSEL)using a coupled-cavity(CC)design to broaden the bandwidths of gain and delay spectra.The structure is formed by constructing a passive cavity coupled with the active cavity.By rendering the strength of the two resonant cavities,the increased gain bandwidth by 340%and the increased delay bandwidth by 800%are achieved as compared with the signal-cavity(SC)VCSEL.The wideband spectra present more square-like passband which is expected for slow light system.By using it,a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.展开更多
The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold charac...The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active region.Numerical results also indicate that there are optimal values for current aperture in proton implanted VCSELs.The minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 mm,while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors(DBRs) and confinement radius of 2.5 mm can realize the minimum temperature.展开更多
文摘The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.
文摘A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.
文摘Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.
文摘Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.
文摘Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.
文摘The monolithic integration of vertical-cavity surface-emitting lasers (VCSEL) with photodetectors is very important in the application of free-space optical interconnects.Theoretical and experimental results on the resonant-cavity-enhanced (RCE) photodetector with VCSEL Structure are presented.The compatible requirement in input mirror reflectivity between the VCSEL and the RCE detector is achieved by precisely etching the top mirror.In this way,the RCE detector with relatively high quantum efficiency and necessary optical bandwidth has been obtained.[KH8/9D]
文摘High slope efficiency and high power selected oxide-confined 850nm VCSELs grown by MOCVD are reported.The slope efficiency and the threshold current respectively are 0 82mW/mA and 2 59mA with a 9μm diameter oxidation aperture at 25℃.The maximum power of 16mW is obtained at 23mA current bias.The minimum threshold current can be as low as 570μA with a 5μm diameter oxidation aperture at 25℃.The maximum saturated power is 5 5mW.
文摘The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors （DBR） is studied by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers. These voids decrease the shrinkage of the Al2O3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers. With the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. As a result,the oxide quality is better.
基金Project (No. BG2005011) supported by the High Technology Re-search and Development Program of Jiangsu Province, China
文摘In this paper, we present a simple thermal model of Vertical-Cavity Surface-Emitting Laser （VCSEL） light-current （L1） characteristics based on the rate-equation. The model can be implemented in conventional SPICE-like circuit simulators, including HSPICE, and be used to simulate the key features of VCSEL. The results compare favorably with experimental data from a device reported in the literature. The simple empirical model is especially suitable for Computer Aided Design （CAD）, and greatly simplifies the design of optical communication systems.
基金supported by the National Basic Research Program of China(No.2012CB315704)the National Natural Science Foundation of China(No.61101053)
文摘We propose a vertical cavity semiconductor emitting laser(VCSEL)using a coupled-cavity(CC)design to broaden the bandwidths of gain and delay spectra.The structure is formed by constructing a passive cavity coupled with the active cavity.By rendering the strength of the two resonant cavities,the increased gain bandwidth by 340%and the increased delay bandwidth by 800%are achieved as compared with the signal-cavity(SC)VCSEL.The wideband spectra present more square-like passband which is expected for slow light system.By using it,a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
基金supported by the Natural Science Foundation of Hebei Province (No.F2007000096)the Research Foundation for the Doctoral Program of Higher Education of China (No.20070080001)
文摘The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active region.Numerical results also indicate that there are optimal values for current aperture in proton implanted VCSELs.The minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 mm,while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors(DBRs) and confinement radius of 2.5 mm can realize the minimum temperature.
