This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured...This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .展开更多
Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si cont...Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.展开更多
Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annea...Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annealing process to stabilize nitrogen‐mesoporous carbon supported Pd single‐atom/cluster(Pd/NMC)material,which provided a catalyst with superior performance for Suzuki coupling reactions.In comparison with commercial palladium/carbon(Pd/C)catalysts,the Pd/NMC catalyst exhibited significantly boosted activity(100%selectivity and 95%yield)and excellent stability(almost no decay in activity after 10 reuse cycles)for the Suzuki coupling reactions of chlorobenzenes,together with superior yield and excellent selectivity in the fields of the board scope of the reactants.Moreover,our newly developed rapid annealing process of precursor solutions is applied as a generalized method to stabilize metal clusters(e.g.Pd,Pt,Ru),opening new possibilities in the construction of efficient highly dispersed metal atom and sub‐nanometer cluster catalysts with high performance.展开更多
文摘This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .
文摘Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.
文摘Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annealing process to stabilize nitrogen‐mesoporous carbon supported Pd single‐atom/cluster(Pd/NMC)material,which provided a catalyst with superior performance for Suzuki coupling reactions.In comparison with commercial palladium/carbon(Pd/C)catalysts,the Pd/NMC catalyst exhibited significantly boosted activity(100%selectivity and 95%yield)and excellent stability(almost no decay in activity after 10 reuse cycles)for the Suzuki coupling reactions of chlorobenzenes,together with superior yield and excellent selectivity in the fields of the board scope of the reactants.Moreover,our newly developed rapid annealing process of precursor solutions is applied as a generalized method to stabilize metal clusters(e.g.Pd,Pt,Ru),opening new possibilities in the construction of efficient highly dispersed metal atom and sub‐nanometer cluster catalysts with high performance.
