Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-ga...Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain.展开更多
A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss...A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET （T-MOSFET） generally applied in present industry, and a conventional trench-gate bipolar-mode JFET （TB-JFET） without buried oxide,for the first time. The simulation results indicate that the switching power loss of the normally-on BTB-JFET is improved by 37% and 14% at 1MHz compared to the T-MOSFET and the normally-on TB-JFET, respectively. In order to demonstrate the validity of the simulation, the normally-on TB-JFET and BTB-JFET have been fabricated successfully for the first time, where the buried oxide structure is realized by thermal oxidation. The experimental results show that the Cgd of the BTB-JFET is decreased by 45% from that of the TB-JFET at zero source-drain bias. Compared to the TB-JFET,the switching time and switching power loss of the BTB-JFET decrease approximately by 7. 4% and 11% at 1MHz,respectively. Therefore,the normally-on BTB-JFET could be pointing to a new direction for the R＆D of low volt- age and high frequency switching devices.展开更多
文摘Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain.
文摘A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET （T-MOSFET） generally applied in present industry, and a conventional trench-gate bipolar-mode JFET （TB-JFET） without buried oxide,for the first time. The simulation results indicate that the switching power loss of the normally-on BTB-JFET is improved by 37% and 14% at 1MHz compared to the T-MOSFET and the normally-on TB-JFET, respectively. In order to demonstrate the validity of the simulation, the normally-on TB-JFET and BTB-JFET have been fabricated successfully for the first time, where the buried oxide structure is realized by thermal oxidation. The experimental results show that the Cgd of the BTB-JFET is decreased by 45% from that of the TB-JFET at zero source-drain bias. Compared to the TB-JFET,the switching time and switching power loss of the BTB-JFET decrease approximately by 7. 4% and 11% at 1MHz,respectively. Therefore,the normally-on BTB-JFET could be pointing to a new direction for the R＆D of low volt- age and high frequency switching devices.
