With the significant discharge of antibiotic wastewater into the aquatic and terrestrial ecosystems, antibiotic pollution has become a serious problem and presents a hazardous risk to the environment. To address such ...With the significant discharge of antibiotic wastewater into the aquatic and terrestrial ecosystems, antibiotic pollution has become a serious problem and presents a hazardous risk to the environment. To address such issues, various investigations on the removal of antibiotics have been undertaken. Photocatalysis has received tremendous attention owing to its great potential in removing antibiotics from aqueous solutions via a green, economic, and effective process. However, such a technology employing traditional photocatalysts suffers from major drawbacks such as light absorption being restricted to the UV spectrum only and fast charge recombination. To overcome these issues, considerable effort has been directed towards the development of advanced visible light-driven photocatalysts. This mini review summarises recent research progress in the state-of-the-art design and fabrication of photocatalysts with visible-light response for photocatalytic degradation of antibiotic wastewater. Such design strategies involve the doping of metal and non-metal into ultraviolet light-driven photocatalysts, development of new semiconductor photocatalysts, construction of heterojunction photocatalysts, and fabrication of surface plasmon resonance-enhanced photocatalytic systems. Additionally, some perspectives on the challenges and future developments in the area of photocatalytic degradation of antibiotics are provided.展开更多
The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented. Epilayers are grown on...The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented. Epilayers are grown on SI GaAs substrates using MBE. For this structure, a mobility of 5410cm^2/(V · s) and a sheet density of 1.34 × 10^12 cm^-2 are achieved at room temperature. During the gate fabrication of E/D-mode PHEMTs,a novel twostep technology is applied. The devices with a gate dimension of 1μm × 100μm exhibit good DC and RF performances. Threshold voltages of 0. 2 and -0. 4V,maximum drain current densities of 300 and 340mA/mm,and extrinsic transconductances of 350 and 300mS/mm for E- and D-mode PHEMTs are obtained, respectively. The reverse gatedrain breakdown voltage is -14V for both E- and D-mode. Current-gain cutoff frequencies of 10. 3 and 12.4GHz and power-gain cutoff frequencies of 12.8 and 14.7GHz for E- and D-mode are reported, respectively.展开更多
The dry sliding wear behavior of AA6061 matrix composite reinforced with aluminium nitride particles(AlN) produced by stir casting process was investigated. A regression model was developed to predict the wear rate ...The dry sliding wear behavior of AA6061 matrix composite reinforced with aluminium nitride particles(AlN) produced by stir casting process was investigated. A regression model was developed to predict the wear rate of the prepared composite. A four-factor, five-level central composite rotatable design matrix was used to minimize the number of experimental runs. The factors considered in this study were sliding velocity, sliding distance, normal load and mass fraction of AlN reinforcement in the matrix. The developed regression model was validated by statistical software SYSTAT 12 and statistical tools such as analysis of variance(ANOVA) and student's t test. It was found that the developed regression model could be effectively used to predict the wear rate at 95% confidence level. The influence of these factors on wear rate of AA6061/AlNp composite was analyzed using the developed regression model and predicted trends were discussed with the aid of worn surface morphologies. The regression model indicated that the wear rate of cast AA6061/AlNp composite decreased with an increase in the mass fraction of AlN and increased with an increase of the sliding velocity, sliding distance and normal load acting on the composite specimen.展开更多
Introduction In the United States, there are about 17.6 million patients suffer from symptomatic coronary artery disease (CAD), affecting 7.9% of adults ≥ 20 years of age.1 An estimated 10.2 million patients have ...Introduction In the United States, there are about 17.6 million patients suffer from symptomatic coronary artery disease (CAD), affecting 7.9% of adults ≥ 20 years of age.1 An estimated 10.2 million patients have angina, and 500,000 patients will develop new angina pectoris each year. 1 A subset of angina patients are categorized as refractory when symptoms continue despite optimal medical therapy and revascularization.Routine daily activities become impossible without experiencing chest pain in this patient population.2展开更多
Objective: To construct sarvivin shRNA expression vector carting enhanced green fluorescent protein gene, transfect it into GBC-SDH cells via electroporation, and get GBC-SD cells which are stable expressing survivin...Objective: To construct sarvivin shRNA expression vector carting enhanced green fluorescent protein gene, transfect it into GBC-SDH cells via electroporation, and get GBC-SD cells which are stable expressing survivin shRNA. Methods: The siRNA sequence targeting survivin mRNA was synthesized and cloned into pEGFP-H1. The constructed plasmid and pEGFP-H1 were transfected into GBC-SI) cells respectively via liposome, and the transfecting effect was detected with Flow Cytometry. Then the transfected cells were selected with G418. Results: The recombinant plasmid was successfully constructed, named pEGFP-survivin. The gene transfection efficiencies in pEGFP-H1-transfected group and pEGFP-survivin- transfected group were the 80.29% ± 2.71% and 83.85% ±2.34%(P〉0.05), which was successful to get the cells that are stable expressing shRNA, named GBC-SD/EGFP and GBC-SD/survivin. Conclusion: Survivin shRNA successfully and got GBC-SD cells which are stable expression vector was constructed expression shRNA.展开更多
Turbulence enhancement by particle wake effect is studied by numerical simulation of gas turbulent flows passing over particle under various particle sizes, inlet gas velocities, gas viscosity, gas density and the dis...Turbulence enhancement by particle wake effect is studied by numerical simulation of gas turbulent flows passing over particle under various particle sizes, inlet gas velocities, gas viscosity, gas density and the distance of particles. By performing dimension analysis and using the form of gas-particle interaction source term for reference, a new semi-empirical turbulence enhancement model by the particle-wake effect is proposed. The turbulence model is then incorporated into second-order moment model for simulating gas-particle flows in a horizontal channel with different wall roughness and a sudden-expansion chamber. The results show that this model is with higher calculating accuracy than another two turbulence models in comparison with the experimental results.展开更多
The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photolu...The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.展开更多
基金supported by the National Natural Science Foundation of China(21421001,21276116,21477050,21301076,21303074)Natural Science Foundation of Jiangsu Province(BK20140530,BK20150482)+5 种基金China Postdoctoral Science Foundation(2015M570409)Chinese-German Cooperation Research Project(GZ1091)Program for High-Level Innovative and Entrepreneurial Talents in Jiangsu ProvinceProgram for New Century Excellent Talents in University(NCET-13-0835)Henry Fok Education Foundation(141068)Six Talents Peak Project in Jiangsu Province(XCL-025)~~
文摘With the significant discharge of antibiotic wastewater into the aquatic and terrestrial ecosystems, antibiotic pollution has become a serious problem and presents a hazardous risk to the environment. To address such issues, various investigations on the removal of antibiotics have been undertaken. Photocatalysis has received tremendous attention owing to its great potential in removing antibiotics from aqueous solutions via a green, economic, and effective process. However, such a technology employing traditional photocatalysts suffers from major drawbacks such as light absorption being restricted to the UV spectrum only and fast charge recombination. To overcome these issues, considerable effort has been directed towards the development of advanced visible light-driven photocatalysts. This mini review summarises recent research progress in the state-of-the-art design and fabrication of photocatalysts with visible-light response for photocatalytic degradation of antibiotic wastewater. Such design strategies involve the doping of metal and non-metal into ultraviolet light-driven photocatalysts, development of new semiconductor photocatalysts, construction of heterojunction photocatalysts, and fabrication of surface plasmon resonance-enhanced photocatalytic systems. Additionally, some perspectives on the challenges and future developments in the area of photocatalytic degradation of antibiotics are provided.
文摘The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented. Epilayers are grown on SI GaAs substrates using MBE. For this structure, a mobility of 5410cm^2/(V · s) and a sheet density of 1.34 × 10^12 cm^-2 are achieved at room temperature. During the gate fabrication of E/D-mode PHEMTs,a novel twostep technology is applied. The devices with a gate dimension of 1μm × 100μm exhibit good DC and RF performances. Threshold voltages of 0. 2 and -0. 4V,maximum drain current densities of 300 and 340mA/mm,and extrinsic transconductances of 350 and 300mS/mm for E- and D-mode PHEMTs are obtained, respectively. The reverse gatedrain breakdown voltage is -14V for both E- and D-mode. Current-gain cutoff frequencies of 10. 3 and 12.4GHz and power-gain cutoff frequencies of 12.8 and 14.7GHz for E- and D-mode are reported, respectively.
文摘The dry sliding wear behavior of AA6061 matrix composite reinforced with aluminium nitride particles(AlN) produced by stir casting process was investigated. A regression model was developed to predict the wear rate of the prepared composite. A four-factor, five-level central composite rotatable design matrix was used to minimize the number of experimental runs. The factors considered in this study were sliding velocity, sliding distance, normal load and mass fraction of AlN reinforcement in the matrix. The developed regression model was validated by statistical software SYSTAT 12 and statistical tools such as analysis of variance(ANOVA) and student's t test. It was found that the developed regression model could be effectively used to predict the wear rate at 95% confidence level. The influence of these factors on wear rate of AA6061/AlNp composite was analyzed using the developed regression model and predicted trends were discussed with the aid of worn surface morphologies. The regression model indicated that the wear rate of cast AA6061/AlNp composite decreased with an increase in the mass fraction of AlN and increased with an increase of the sliding velocity, sliding distance and normal load acting on the composite specimen.
文摘Introduction In the United States, there are about 17.6 million patients suffer from symptomatic coronary artery disease (CAD), affecting 7.9% of adults ≥ 20 years of age.1 An estimated 10.2 million patients have angina, and 500,000 patients will develop new angina pectoris each year. 1 A subset of angina patients are categorized as refractory when symptoms continue despite optimal medical therapy and revascularization.Routine daily activities become impossible without experiencing chest pain in this patient population.2
文摘Objective: To construct sarvivin shRNA expression vector carting enhanced green fluorescent protein gene, transfect it into GBC-SDH cells via electroporation, and get GBC-SD cells which are stable expressing survivin shRNA. Methods: The siRNA sequence targeting survivin mRNA was synthesized and cloned into pEGFP-H1. The constructed plasmid and pEGFP-H1 were transfected into GBC-SI) cells respectively via liposome, and the transfecting effect was detected with Flow Cytometry. Then the transfected cells were selected with G418. Results: The recombinant plasmid was successfully constructed, named pEGFP-survivin. The gene transfection efficiencies in pEGFP-H1-transfected group and pEGFP-survivin- transfected group were the 80.29% ± 2.71% and 83.85% ±2.34%(P〉0.05), which was successful to get the cells that are stable expressing shRNA, named GBC-SD/EGFP and GBC-SD/survivin. Conclusion: Survivin shRNA successfully and got GBC-SD cells which are stable expression vector was constructed expression shRNA.
基金the National Natural Science Foundation of China(No.50736006)the Aero-Science Fund(No.2009ZB56004)the Jiangxi Provincial Natural Science Foundation(Nos.2009GZC0100 and 2008GZW0016)
文摘Turbulence enhancement by particle wake effect is studied by numerical simulation of gas turbulent flows passing over particle under various particle sizes, inlet gas velocities, gas viscosity, gas density and the distance of particles. By performing dimension analysis and using the form of gas-particle interaction source term for reference, a new semi-empirical turbulence enhancement model by the particle-wake effect is proposed. The turbulence model is then incorporated into second-order moment model for simulating gas-particle flows in a horizontal channel with different wall roughness and a sudden-expansion chamber. The results show that this model is with higher calculating accuracy than another two turbulence models in comparison with the experimental results.
基金supported by the National Natural Science Foundation of China(Nos.61036003 and 61176092)the Ph.D.Programs Foundation of Ministry of Education of China(No.20110121110025)
文摘The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.