SiN, films are deposited on silicon wafers through plasma enhanced chemical vapor deposition （PECVD）. The relationship between the film stress and deposition factors is investigated. It is found that low stress film...SiN, films are deposited on silicon wafers through plasma enhanced chemical vapor deposition （PECVD）. The relationship between the film stress and deposition factors is investigated. It is found that low stress films would be obtained by adjusting the ratio of low frequency（LF） power to high frequency（HF） power pulse time or the chamber pressure. The best of the two methods to control stress in the film is changing the percentage of LF power pulse time. The low stress condition is achieved when the percentage of low frequency power pulse time in total time（LF and HF pulse time） is close to 40%, The low stress cantilever of tunable vertical cavity surface emitting laser is obtained by using this deposition condition,展开更多
A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from met...A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning elec-tron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy in-dicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 mm, and the carbon nanotubes are mainly restrained within the channels of templates.展开更多
基金National Basic Research Program of China(2006CB604902) Academic Human Resources Development inInstitutions of Higher Learning Under the Jurisdiction of Beijing Municipality(05002015200504)
文摘SiN, films are deposited on silicon wafers through plasma enhanced chemical vapor deposition （PECVD）. The relationship between the film stress and deposition factors is investigated. It is found that low stress films would be obtained by adjusting the ratio of low frequency（LF） power to high frequency（HF） power pulse time or the chamber pressure. The best of the two methods to control stress in the film is changing the percentage of LF power pulse time. The low stress condition is achieved when the percentage of low frequency power pulse time in total time（LF and HF pulse time） is close to 40%, The low stress cantilever of tunable vertical cavity surface emitting laser is obtained by using this deposition condition,
文摘A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning elec-tron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy in-dicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 mm, and the carbon nanotubes are mainly restrained within the channels of templates.
