提出了一种在水树缺陷内生成纳米级TiO2颗粒的修复液及修复方法,并针对该修复液的修复机制及绝缘增强机制进行了讨论。采用水针法在交联聚乙烯(XLPE)电缆样品中制造水树缺陷,并对已生成水树的样品进行了基于钛酸酯类催化的硅氧烷修复液...提出了一种在水树缺陷内生成纳米级TiO2颗粒的修复液及修复方法,并针对该修复液的修复机制及绝缘增强机制进行了讨论。采用水针法在交联聚乙烯(XLPE)电缆样品中制造水树缺陷,并对已生成水树的样品进行了基于钛酸酯类催化的硅氧烷修复液注入式修复,发现其绝缘性能得到显著提高,甚至击穿电压指标明显优于新电缆。基于扫描电子显微镜(scanning electron microscope,SEM)、X射线光电子能谱分析(X-ray photoelectron spectroscopy,XPS)和红外光谱分析,证明被修复样品击穿通道内有纳米级TiO2颗粒存在。通过对钛酸酯类催化剂水解反应的生成物研究,证明了该催化剂水解后生成纳米级TiO2颗粒。基于这一发现,提出了相应的绝缘增强机制及作用模型,认为分散的纳米级TiO2颗粒有效抑制了通道内由于局部放电产生的烧蚀损伤,从而增强了电缆的绝缘性能,提高了电缆的击穿电压。展开更多
The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photolu...The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum （FWHM） is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.展开更多
文摘提出了一种在水树缺陷内生成纳米级TiO2颗粒的修复液及修复方法,并针对该修复液的修复机制及绝缘增强机制进行了讨论。采用水针法在交联聚乙烯(XLPE)电缆样品中制造水树缺陷,并对已生成水树的样品进行了基于钛酸酯类催化的硅氧烷修复液注入式修复,发现其绝缘性能得到显著提高,甚至击穿电压指标明显优于新电缆。基于扫描电子显微镜(scanning electron microscope,SEM)、X射线光电子能谱分析(X-ray photoelectron spectroscopy,XPS)和红外光谱分析,证明被修复样品击穿通道内有纳米级TiO2颗粒存在。通过对钛酸酯类催化剂水解反应的生成物研究,证明了该催化剂水解后生成纳米级TiO2颗粒。基于这一发现,提出了相应的绝缘增强机制及作用模型,认为分散的纳米级TiO2颗粒有效抑制了通道内由于局部放电产生的烧蚀损伤,从而增强了电缆的绝缘性能,提高了电缆的击穿电压。
基金supported by the National Natural Science Foundation of China(Nos.61036003 and 61176092)the Ph.D.Programs Foundation of Ministry of Education of China(No.20110121110025)
文摘The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum （FWHM） is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.
