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固体微/纳薄膜的导热性质研究
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作者 杨培广 《应用物理》 2013年第1期9-12,共4页
本文基于表面热阻的概念导出一种固体微/纳薄膜热导率与尺寸关系的模型。该模型表明固体薄膜热导率倒数与薄膜厚度倒数之间存在线性关系,其斜率和截距分别是表面热阻和固体材料热导率的倒数。本文通过用分子动力学模拟计算厚度为2~14 n... 本文基于表面热阻的概念导出一种固体微/纳薄膜热导率与尺寸关系的模型。该模型表明固体薄膜热导率倒数与薄膜厚度倒数之间存在线性关系,其斜率和截距分别是表面热阻和固体材料热导率的倒数。本文通过用分子动力学模拟计算厚度为2~14 nm的固体氩晶体薄膜热导率验证了该模型的正确性,并且用声子散射理论和文献数据对其加以佐证。 展开更多
关键词 热导率 动力学 表面热阻 声子散射理论
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Physically-based modeling for hole scattering rate in strained Si_(1-x) Ge_x/(100)Si
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作者 王斌 胡辉勇 +2 位作者 张鹤鸣 宋建军 张玉明 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第2期430-436,共7页
Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into accoun... Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%. 展开更多
关键词 strained Si1-x Gex biaxial stress hole scattering rate effective mass
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