The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. Th...The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.展开更多
文摘The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.