We propose a new scheme to estimate the heating rate of trapped ions in thermal states. By applying a controlled-U gate between the internal and the motional states of one of the trapped ions, we could obtain the mean...We propose a new scheme to estimate the heating rate of trapped ions in thermal states. By applying a controlled-U gate between the internal and the motional states of one of the trapped ions, we could obtain the mean phonon number from the population of the internal state of the ion. The imperfection due to fluctuations of the relevant parameters in real experiments is considered and we anaiyze the experimental feasibility of our scheme with sophisticated ion trap techniques.展开更多
基金Supported by National Natural Science Foundation of China under Grant No.10774163
文摘We propose a new scheme to estimate the heating rate of trapped ions in thermal states. By applying a controlled-U gate between the internal and the motional states of one of the trapped ions, we could obtain the mean phonon number from the population of the internal state of the ion. The imperfection due to fluctuations of the relevant parameters in real experiments is considered and we anaiyze the experimental feasibility of our scheme with sophisticated ion trap techniques.
