A rectangle capacity patch was adopted as the resonance unit of the Log Periodic Dipole Antenna (LPDA) so as to realize the miniaturization of this aerial in this paper. Fifteen rectangle capacity patch units of diffe...A rectangle capacity patch was adopted as the resonance unit of the Log Periodic Dipole Antenna (LPDA) so as to realize the miniaturization of this aerial in this paper. Fifteen rectangle capacity patch units of different parameters were analyzed in this paper and three design laws of size-reduction were found. Accord-ing to these design laws, a 70% miniaturization ratio LPDA was designed and fabricated. The Voltage Standing Wave Ratio (VSWR) and pattern of the fabricated LPDA were measured. The results indicate that this size-reduction method do not deteriorate performance.展开更多
Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor un...Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology,simulating results show that the new structure device has higher signal-to-noise ratio,wider output swing,wider dynamic range and faster readout speed.展开更多
文摘A rectangle capacity patch was adopted as the resonance unit of the Log Periodic Dipole Antenna (LPDA) so as to realize the miniaturization of this aerial in this paper. Fifteen rectangle capacity patch units of different parameters were analyzed in this paper and three design laws of size-reduction were found. Accord-ing to these design laws, a 70% miniaturization ratio LPDA was designed and fabricated. The Voltage Standing Wave Ratio (VSWR) and pattern of the fabricated LPDA were measured. The results indicate that this size-reduction method do not deteriorate performance.
基金Hunan Provincial Natural Science Foundation of China(05JJ30115)
文摘Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology,simulating results show that the new structure device has higher signal-to-noise ratio,wider output swing,wider dynamic range and faster readout speed.
