A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the c...A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the channel in different electric fields is obtained. This method is faster and more robust than traditional meth- ods and should be applicable to other types of HEMTs simulations. A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.展开更多
文摘运用RLC 电路脉冲产生原理设计出一种以反向导通双晶复合晶体管(Reversely Switching Dynistor,简称RSD)作为开关的脉冲放电主回路。基于RSD 开通的预充要求,引入磁开关作为主回路和触发回路的延迟隔离器。根据磁开关饱和时间τ和饱和电感Ls的综合要求,讨论了磁开关磁性材料的选取,重点设计了体积参数,分析了 s杂散电容、电感对放电回路的不利影响,分别给出两者的估算方法及减小措施。试验连线长60cm ,磁开关采用环形结构,磁芯材料为铁基非晶合金磁芯,其内径为60m m ,外径为120m m ,高为30m m 。经过多次放电试验,得到下述结果:①改善回路杂散电容及电感后,放电电流波形明显光滑;②磁开关绕线匝数决定了隔离时间并改变了回路总电感;③不同负载电阻的放电波形符合RLC 放电规律。试验结果验证了电路参数设计的合理性。该放电回路适合RSD 的测试及其脉冲功率电源。
文摘A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the channel in different electric fields is obtained. This method is faster and more robust than traditional meth- ods and should be applicable to other types of HEMTs simulations. A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.
