采用旋涂法制备硅烷偶联剂-氧化石墨烯(KH550-GO)新型复合栅介质薄膜,由于栅介质层和沟道层界面处明显的双电层效应,单位面积电容高达2.18×10^(–6)F/cm^2。通过自组装法,借助磁控溅射仪,仅需一次掩膜,即可同时生成晶体管的沟道与...采用旋涂法制备硅烷偶联剂-氧化石墨烯(KH550-GO)新型复合栅介质薄膜,由于栅介质层和沟道层界面处明显的双电层效应,单位面积电容高达2.18×10^(–6)F/cm^2。通过自组装法,借助磁控溅射仪,仅需一次掩膜,即可同时生成晶体管的沟道与源漏电极。利用半导体参数分析仪在室温黑暗的条件下测量该晶体管的电学特性,结果表明,KH550-GO栅介质氧化物薄膜晶体管具有优良的电学性能,其工作电压仅为2 V、饱和电流为580μA、亚阈值摆幅108 m V/dec、开关比4×10~7、场效应迁移率16.7 cm^2·V^(-1)·s^(-1)。展开更多
Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with ...Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.展开更多
文摘采用旋涂法制备硅烷偶联剂-氧化石墨烯(KH550-GO)新型复合栅介质薄膜,由于栅介质层和沟道层界面处明显的双电层效应,单位面积电容高达2.18×10^(–6)F/cm^2。通过自组装法,借助磁控溅射仪,仅需一次掩膜,即可同时生成晶体管的沟道与源漏电极。利用半导体参数分析仪在室温黑暗的条件下测量该晶体管的电学特性,结果表明,KH550-GO栅介质氧化物薄膜晶体管具有优良的电学性能,其工作电压仅为2 V、饱和电流为580μA、亚阈值摆幅108 m V/dec、开关比4×10~7、场效应迁移率16.7 cm^2·V^(-1)·s^(-1)。
文摘Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.
