Silicon carbide particle reinforced aluminum matrix composites(SiCp/Al composites)are widely used in aviation,aerospace and electronic package.However,low machining efficiency,severe tool wear and poor surface quality...Silicon carbide particle reinforced aluminum matrix composites(SiCp/Al composites)are widely used in aviation,aerospace and electronic package.However,low machining efficiency,severe tool wear and poor surface quality are severe during the machining of SiCp/Al composites.Laser-induced oxidation is capable to improve the machinability of SiCp/Al composites.The material response of 55%(volume fraction)SiCp/Al composites induced by a nanosecond pulsed laser is studied.A metamorphic layer which is composed of an oxide layer and sub-layer is produced.The effects of reaction surrounding and laser average power on the microstructure and thickness of the oxide layer and sub-layer are investigated.Experimental results show that:A thicker oxide layer and a sub-layer are formed in an oxygen-rich atmosphere.The oxides are mainly composed of 2Al2O3·SiO2(mullite).A positive correlation between the laser average power and thicknesses of oxide layers and sub-layers is found.A loose oxide layer of 138μm and a sub-layer of 21μm are formed at the laser average power of 6 W,laser scanning pitch of 10μm,and laser scanning speed of 1 mm/s under an oxygen-rich atmosphere.The high efficient machining of Si Cp/Al composites can be realized by laser-induced oxidation.展开更多
We fabricate a free-standing few-layer molybdenum disulfide （MoS2）-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a wideband tunable, ultrafast mode-lo...We fabricate a free-standing few-layer molybdenum disulfide （MoS2）-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a wideband tunable, ultrafast mode-locked fiber laser. Stable, picosecond pulses, tunable from 1,535 nm to 1,565 nm, are generated, corresponding to photon energies below the MoS2 material bandgap. These results contribute to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.展开更多
As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafe...As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells with high stable efficiency maybe attainable using the crystalline wafers.展开更多
By connecting tercarbazole(3 Cz)and triphenyltriazine(TRz)units with a diphenyl ether group,we designed and synthesized a new donor-spacer-acceptor structure molecule9’-(4-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenoxy)...By connecting tercarbazole(3 Cz)and triphenyltriazine(TRz)units with a diphenyl ether group,we designed and synthesized a new donor-spacer-acceptor structure molecule9’-(4-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenoxy)phenyl)-9’H-9,3’:6’,9"-tercarbazole(3 Cz-o-TRz)as the multifunctional component of exciplex emitters.As expected,the intermolecular charge-transfer transition is dominant for3 Cz-o-TRz because of the space-enough and conjugation-forbidden linkage of the diphenyl ether group,increasing the intrinsic characteristics of the 3 Cz and TRz moieties in its single-molecule state.Accordingly,three common electron acceptors(4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine(B3 PyMPm),4,6-bis(3,5-di(pyridin-4-yl)phenyl)-2-methylpyrimidine(B4 PyMPm),and(1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl)tris(diphenylphosphineoxide)(POT2 T))and three common electron donors(4,4’-(cyclohexane-1,1-diyl)bis(N,N-di-p-tolylaniline)(TAPC),tris(4-(10 H-phenoxazin-10-yl)phenyl)amine(TPA-PXZ),and N1-phenyl-N4,N4-bis(4-(phenyl(m-tolyl)amino)phenyl)-N1-(m-tolyl)benzene-1,4-diamine(m-MTDATA))were chosen to construct six exciplex emitters with 3 Cz-o-TRz.In the organic light-emitting diodes(OLEDs),the emission spectra of these exciplex emitters could be gradually modulated from 510 to 590 nm.In addition,TAPC:3 Cz-o-TRz-and 3 Cz-o-TRz:PO-T2 T-based OLEDs achieved desirable performance with maximum external quantum efficiencies(EQEs)around 12%.Moreover,a simple tandem OLED containing TAPC:3 Cz-o-TRz and 3 Czo-TRz:PO-T2 T emitters realized optimal performance with an ultralow turn-on voltage of 2.4 V and a maximum EQE of14.1%.These results indicate the great potential of the donorspacer-acceptor structure compounds in developing exciplex emitters.展开更多
基金supported by the National Natural Science Foundation of China(Nos.51705249, 52075255)the China Postdoctoral Science Foundation (No.2019M661823)
文摘Silicon carbide particle reinforced aluminum matrix composites(SiCp/Al composites)are widely used in aviation,aerospace and electronic package.However,low machining efficiency,severe tool wear and poor surface quality are severe during the machining of SiCp/Al composites.Laser-induced oxidation is capable to improve the machinability of SiCp/Al composites.The material response of 55%(volume fraction)SiCp/Al composites induced by a nanosecond pulsed laser is studied.A metamorphic layer which is composed of an oxide layer and sub-layer is produced.The effects of reaction surrounding and laser average power on the microstructure and thickness of the oxide layer and sub-layer are investigated.Experimental results show that:A thicker oxide layer and a sub-layer are formed in an oxygen-rich atmosphere.The oxides are mainly composed of 2Al2O3·SiO2(mullite).A positive correlation between the laser average power and thicknesses of oxide layers and sub-layers is found.A loose oxide layer of 138μm and a sub-layer of 21μm are formed at the laser average power of 6 W,laser scanning pitch of 10μm,and laser scanning speed of 1 mm/s under an oxygen-rich atmosphere.The high efficient machining of Si Cp/Al composites can be realized by laser-induced oxidation.
文摘We fabricate a free-standing few-layer molybdenum disulfide （MoS2）-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a wideband tunable, ultrafast mode-locked fiber laser. Stable, picosecond pulses, tunable from 1,535 nm to 1,565 nm, are generated, corresponding to photon energies below the MoS2 material bandgap. These results contribute to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.
基金supported by the National Key Research Project MOST (2016YFA0202400)the National Natural Science Foundation of China (61604090, 61604091, 61674098)+4 种基金National University Research Fund (GK261001009, GK201603107)the Changjiang Scholar and Innovative Research Team (IRT_14R33)the 111 Project (B14041)the Chinese National 1000-talent-plan Program (1110010341)the Innovation Funds of Graduate Programs, SNNU (2015CXS047)
文摘As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells with high stable efficiency maybe attainable using the crystalline wafers.
基金supported by the National Natural Science Foundation of China(51773029,52073040,51533005 and 51821002)the Fundamental Research Funds for the Central Universities(ZYGX2016Z010)the International Cooperation and Exchange Project of Science and Technology Department of Sichuan Province(2019YFH0057 and 2019YFH0059)。
文摘By connecting tercarbazole(3 Cz)and triphenyltriazine(TRz)units with a diphenyl ether group,we designed and synthesized a new donor-spacer-acceptor structure molecule9’-(4-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenoxy)phenyl)-9’H-9,3’:6’,9"-tercarbazole(3 Cz-o-TRz)as the multifunctional component of exciplex emitters.As expected,the intermolecular charge-transfer transition is dominant for3 Cz-o-TRz because of the space-enough and conjugation-forbidden linkage of the diphenyl ether group,increasing the intrinsic characteristics of the 3 Cz and TRz moieties in its single-molecule state.Accordingly,three common electron acceptors(4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine(B3 PyMPm),4,6-bis(3,5-di(pyridin-4-yl)phenyl)-2-methylpyrimidine(B4 PyMPm),and(1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl)tris(diphenylphosphineoxide)(POT2 T))and three common electron donors(4,4’-(cyclohexane-1,1-diyl)bis(N,N-di-p-tolylaniline)(TAPC),tris(4-(10 H-phenoxazin-10-yl)phenyl)amine(TPA-PXZ),and N1-phenyl-N4,N4-bis(4-(phenyl(m-tolyl)amino)phenyl)-N1-(m-tolyl)benzene-1,4-diamine(m-MTDATA))were chosen to construct six exciplex emitters with 3 Cz-o-TRz.In the organic light-emitting diodes(OLEDs),the emission spectra of these exciplex emitters could be gradually modulated from 510 to 590 nm.In addition,TAPC:3 Cz-o-TRz-and 3 Cz-o-TRz:PO-T2 T-based OLEDs achieved desirable performance with maximum external quantum efficiencies(EQEs)around 12%.Moreover,a simple tandem OLED containing TAPC:3 Cz-o-TRz and 3 Czo-TRz:PO-T2 T emitters realized optimal performance with an ultralow turn-on voltage of 2.4 V and a maximum EQE of14.1%.These results indicate the great potential of the donorspacer-acceptor structure compounds in developing exciplex emitters.
