Co−TiO2 nanocomposite films were prepared via magnetron sputtering at various substrate temperatures.The films comprise Co particles dispersed in an amorphous TiO2 matrix and exhibit coexisting ferromagnetic and super...Co−TiO2 nanocomposite films were prepared via magnetron sputtering at various substrate temperatures.The films comprise Co particles dispersed in an amorphous TiO2 matrix and exhibit coexisting ferromagnetic and superparamagnetic properties.When the substrate temperature increases from room temperature to 400℃,Co particles gradually grow,and the degree of Co oxidation significantly decreases.Consequently,the saturation magnetization increases from 0.13 to 0.43 T at the same Co content by increasing the substrate temperature from room temperature to 400℃.At a high substrate temperature,conductive pathways form among some of the clustered Co particles.Thus,resistivity rapidly declines from 1600 to 76μΩ·m.The magnetoresistive characteristic of Co−TiO2 films is achieved even at resistivity of as low as 76μΩ·m.These results reveal that the obtained nanocomposite films have low Co oxidation,high magnetization and magnetoresistance at room temperature.展开更多
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usuall...Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.展开更多
基金Project(2016YFE0205700)supported by the National Key Research and Development Program of ChinaProject(18JCYBJC18000)supported by the Natural Science Foundation of Tianjin City,China。
文摘Co−TiO2 nanocomposite films were prepared via magnetron sputtering at various substrate temperatures.The films comprise Co particles dispersed in an amorphous TiO2 matrix and exhibit coexisting ferromagnetic and superparamagnetic properties.When the substrate temperature increases from room temperature to 400℃,Co particles gradually grow,and the degree of Co oxidation significantly decreases.Consequently,the saturation magnetization increases from 0.13 to 0.43 T at the same Co content by increasing the substrate temperature from room temperature to 400℃.At a high substrate temperature,conductive pathways form among some of the clustered Co particles.Thus,resistivity rapidly declines from 1600 to 76μΩ·m.The magnetoresistive characteristic of Co−TiO2 films is achieved even at resistivity of as low as 76μΩ·m.These results reveal that the obtained nanocomposite films have low Co oxidation,high magnetization and magnetoresistance at room temperature.
基金This work was supported by the STCSM （No.13NMI400600） and the National Natural Science Foundation of China （No.U1430106）.
文摘Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.
