One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is demonstrated.Benefiting from the existence of Ga_(2)O_(3):Si nanolayer,a...One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is demonstrated.Benefiting from the existence of Ga_(2)O_(3):Si nanolayer,a high-quality(Al_(0.68)Ga_(0.32))_(2)O_(3)sesquioxide film with 68 at.%aluminum was epitaxially grown on sapphire substrates,which was characterized by high-resolution transmission electron microscopy,X-ray photoelectron spectroscopy and X-ray diffraction.Its bandgap was broadened to 6.14 eV,and a vacuum ultraviolet(VUV)(AlGa)_(2)O_(3)/Ga_(2)O_(3):Si photodetector was subsequently fabricated.The detector exhibits a pretty high on-off ratio of about 10^(3),an open-circuit voltage of 1.0 V and a responsivity of 8.1 mA W^(-1) at 0 V bias voltage.The performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of(AlGa)_(2)O_(3)sesquioxides,which is expected to facilitate their application in VUV photodetection.展开更多
基金supported by the National Natural Science Foundation of China(91833301 and 61427901)Guangdong Natural Science Funds for Distinguished Young Scholars(2021B1515020105)Guangdong Basic and Applied Basic Research Foundation(2019A1515110916)。
文摘One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is demonstrated.Benefiting from the existence of Ga_(2)O_(3):Si nanolayer,a high-quality(Al_(0.68)Ga_(0.32))_(2)O_(3)sesquioxide film with 68 at.%aluminum was epitaxially grown on sapphire substrates,which was characterized by high-resolution transmission electron microscopy,X-ray photoelectron spectroscopy and X-ray diffraction.Its bandgap was broadened to 6.14 eV,and a vacuum ultraviolet(VUV)(AlGa)_(2)O_(3)/Ga_(2)O_(3):Si photodetector was subsequently fabricated.The detector exhibits a pretty high on-off ratio of about 10^(3),an open-circuit voltage of 1.0 V and a responsivity of 8.1 mA W^(-1) at 0 V bias voltage.The performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of(AlGa)_(2)O_(3)sesquioxides,which is expected to facilitate their application in VUV photodetection.
