Zhejiang Small and medium enterprises have had major achievements adapting to the trend of economic development and it encountered bottlenecks. During the development process, there are malpractices, such as the paren...Zhejiang Small and medium enterprises have had major achievements adapting to the trend of economic development and it encountered bottlenecks. During the development process, there are malpractices, such as the parent wind, system＇s lacking of science, epitaxial growth, excessive dependence on the international market, and ineffective management mode. Based on the central economic work conference, changing management and enterprise strategy adjustment are inevitable choices of Zhejiang small and medium-sized enterprises＂ management mode development.展开更多
Reducing the module prices by increasing the efficiency of solar cells is one of the major challenges in today＇s photovoltaic research. The emitter formation by epitaxial growth offers a cost-efficient and faster alt...Reducing the module prices by increasing the efficiency of solar cells is one of the major challenges in today＇s photovoltaic research. The emitter formation by epitaxial growth offers a cost-efficient and faster alternative to the standard furnace diffusion process. The efficiency potential of epitaxial emitters 〉 22% has already been proven using a single wafer, low pressure, chemical vapour deposition tool. The purpose of this work is to show the potential of epitaxially grown emitters by APCVD （atmospheric pressure chemical vapour deposition） compared to diffused emitters. The APCVD formation of epitaxial emitters at 1,050 ~C can be realised as high throughput inline process and only takes 1-2 min, whereas the diffusion process using POCI3 takes up to 60 min. Simulations show an increase in voltage of AVoc = ＋10 mV and a reduction in saturation current ,1o of 30% for the epitaxial emitter. The lifetime experiments of solar cells with epitaxial emitter exhibit a diffusion length Leff〉 750μm and an emitter saturation current of Joe 〈 50 fA/cm2 on a planar 10 Ω2cm p-type FZ wafer. Another important aim of this work is to evaluate the limitations of epitaxial emitters due to high thermal budget, interface recombination and the change of reflective properties on textured wafers due to the deposition process. Solar cell efficiencies up to 18.4% on p-type and 20.0% on n-type wafers presented in this paper underline that the emitter epitaxy by APCVD is a competitive process for the emitter formation.展开更多
文摘Zhejiang Small and medium enterprises have had major achievements adapting to the trend of economic development and it encountered bottlenecks. During the development process, there are malpractices, such as the parent wind, system＇s lacking of science, epitaxial growth, excessive dependence on the international market, and ineffective management mode. Based on the central economic work conference, changing management and enterprise strategy adjustment are inevitable choices of Zhejiang small and medium-sized enterprises＂ management mode development.
文摘Reducing the module prices by increasing the efficiency of solar cells is one of the major challenges in today＇s photovoltaic research. The emitter formation by epitaxial growth offers a cost-efficient and faster alternative to the standard furnace diffusion process. The efficiency potential of epitaxial emitters 〉 22% has already been proven using a single wafer, low pressure, chemical vapour deposition tool. The purpose of this work is to show the potential of epitaxially grown emitters by APCVD （atmospheric pressure chemical vapour deposition） compared to diffused emitters. The APCVD formation of epitaxial emitters at 1,050 ~C can be realised as high throughput inline process and only takes 1-2 min, whereas the diffusion process using POCI3 takes up to 60 min. Simulations show an increase in voltage of AVoc = ＋10 mV and a reduction in saturation current ,1o of 30% for the epitaxial emitter. The lifetime experiments of solar cells with epitaxial emitter exhibit a diffusion length Leff〉 750μm and an emitter saturation current of Joe 〈 50 fA/cm2 on a planar 10 Ω2cm p-type FZ wafer. Another important aim of this work is to evaluate the limitations of epitaxial emitters due to high thermal budget, interface recombination and the change of reflective properties on textured wafers due to the deposition process. Solar cell efficiencies up to 18.4% on p-type and 20.0% on n-type wafers presented in this paper underline that the emitter epitaxy by APCVD is a competitive process for the emitter formation.
