新能源汽车的快速发展受到动力电池系统安全的掣肘,锂电池组外部短路故障是导致电池热失控进而引发汽车起火爆炸的主要因素之一,而不同拓扑结构及初始荷电状态(State of charge,SOC)影响锂电池组外部短路特性。搭建锂电池组外部短路故...新能源汽车的快速发展受到动力电池系统安全的掣肘,锂电池组外部短路故障是导致电池热失控进而引发汽车起火爆炸的主要因素之一,而不同拓扑结构及初始荷电状态(State of charge,SOC)影响锂电池组外部短路特性。搭建锂电池组外部短路故障试验平台,进行多拓扑结构锂电池组在静置工况下的外部短路试验,模拟汽车停置时电池发生外部短路故障过程,揭示不同拓扑结构及不同初始SOC对锂电池组外部短路特性的影响,为锂离子电池单体分选成组、外部短路故障诊断等方面提供数据支撑。此外,锂离子电池外部短路模型重构是进行故障诊断的基础,对不同等效电路模型对锂离子电池外部短路电压预测精度等进行综合评价,为锂离子电池外部短路电特性重构模型选择提供指导。展开更多
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （...GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.展开更多
文摘新能源汽车的快速发展受到动力电池系统安全的掣肘,锂电池组外部短路故障是导致电池热失控进而引发汽车起火爆炸的主要因素之一,而不同拓扑结构及初始荷电状态(State of charge,SOC)影响锂电池组外部短路特性。搭建锂电池组外部短路故障试验平台,进行多拓扑结构锂电池组在静置工况下的外部短路试验,模拟汽车停置时电池发生外部短路故障过程,揭示不同拓扑结构及不同初始SOC对锂电池组外部短路特性的影响,为锂离子电池单体分选成组、外部短路故障诊断等方面提供数据支撑。此外,锂离子电池外部短路模型重构是进行故障诊断的基础,对不同等效电路模型对锂离子电池外部短路电压预测精度等进行综合评价,为锂离子电池外部短路电特性重构模型选择提供指导。
基金supported by the National Natural Science Foundation of China(Grant No.10875084)the Natural Science Foundation of Jiangsu Province(Grant No.BK2008174)+2 种基金the Applied Science Foundation of Suzhou(Grant No.SYJG0915)the National Basic Research Program of China(Grant No.G2009CB929300)supported by Department of Nuclear Science and Engineering,Nanjing University of Aeronautics and Astronautics
文摘GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.
