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极紫外光刻含缺陷多层膜衍射谱仿真简化模型 被引量:9
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作者 刘晓雷 李思坤 王向朝 《光学学报》 EI CAS CSCD 北大核心 2014年第9期40-46,共7页
建立了一个极紫外光刻含缺陷多层膜衍射谱仿真简化模型,采用相位突变和反射系数振幅衰减表示缺陷对多层膜反射光的影响,得到了含缺陷多层膜衍射谱的解析表达式。简化模型中,相位突变量由多层膜表面以下第6层膜的缺陷形态决定,反射系数... 建立了一个极紫外光刻含缺陷多层膜衍射谱仿真简化模型,采用相位突变和反射系数振幅衰减表示缺陷对多层膜反射光的影响,得到了含缺陷多层膜衍射谱的解析表达式。简化模型中,相位突变量由多层膜表面以下第6层膜的缺陷形态决定,反射系数振幅衰减量由基底的缺陷形态决定。与改进单平面近似(SSA)模型相比,仿真速度基本一致的情况下,简化模型提高了含缺陷多层膜衍射谱仿真的精度,6°入射时,衍射谱的0^+3级衍射光振幅的仿真误差减小50%以上,并且不同入射角情况下,尤其在入射角小于12°时,振幅误差稳定。得到了含缺陷多层膜衍射谱的解析表达式,可进一步理论分析缺陷对多层膜衍射谱的影响,为得到掩模缺陷的补偿公式奠定了基础。 展开更多
关键词 衍射 极紫外光刻 多层膜模型 单平面近似
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Residual stress of physical vapor-deposited polycrystalline multilayers 被引量:1
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作者 ZHANG Song ZHANG Hui ZHENG LiLi 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2015年第2期55-63,共9页
An extended one-dimensional stress model for the deposition of multilayer films is built based on the existing stress model by considering the influence of deposition conditions. Both thermal stress and intrinsic stre... An extended one-dimensional stress model for the deposition of multilayer films is built based on the existing stress model by considering the influence of deposition conditions. Both thermal stress and intrinsic stress are considered to constitute the final residual stress in the model. The deposition process conditions such as deposition temperature, oxygen pressure, and film growth rate are correlated to the full stress model to analyze the final residual stress distribution, and thus the deformation of the deposited multilayer system under different process conditions. Also, the model is numerically realized with in-house built code. A deposition of Ag-Cu multilayer system is simulated with the as-built extended stress model, and the final residual stresses under different deposition conditions are discussed with part of the results compared with experiment from other literature. 展开更多
关键词 growth models stresses physical vapor deposition processes polycrystalline deposition METALS
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Polyelectrolyte multilayer electrostatic gating of graphene field-effect transistors
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作者 Yung Yu Wang Peter J. Burke 《Nano Research》 SCIE EI CAS CSCD 2014年第11期1650-1658,共9页
We apply polyelectrolyte multilayer films by consecutive alternate adsorption of positively charged polyallylamine hydrochloride and negatively charged sodium polystyrene sulfonate to the surface of graphene field eff... We apply polyelectrolyte multilayer films by consecutive alternate adsorption of positively charged polyallylamine hydrochloride and negatively charged sodium polystyrene sulfonate to the surface of graphene field effect transistors. Oscillations in the Dirac voltage shift with alternating positive and negative layers clearly demonstrate the electrostatic gating effect in this simple model system. A simple electrostatic model accounts well for the sign and magnitude of the Dirac voltage shift. Using this system, we are able to create p-type or n-type graphene at will. This model serves as the basis for understanding the mechanism of charged polymer sensing using graphene devices, a potentially technologically important application of graphene in areas such as DNA sequencing, biomarker assays for cancer detection, and other protein sensing applications. 展开更多
关键词 dirac point GRAPHENE transistor electrostatic gating polyallylaminehydrochloride (PAH) sodium polystyrenesulfonate (PSS)
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