We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alqy Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential ba...We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alqy Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential barrier layer, while Alq3 is used as potential well layer and emitting layer. Compared with double-layer structure, the luminescent characteristics of organic samples and diodes with quantum well structure are investigated and the quantum well structure helps the energy transfer between well layer and barrier layer. The quantum well structure makes carriers disperse in the different well layers and then increases the number of excitons to enhance the efficiency of the recombination.展开更多
By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-p...By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated within the framework of dielectric continuum approximation. Numerical calculation on seven-layer AlxGal-xAs/GaAs systems have been performed. Via the numerical results in this work and previous works, the general characters of the IO phonon modes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as a generalization of previous works on IO phonon modes in some fLxed layer-number quantum well systems, and it provides a uniform method to investittate the effects of IO phonons on the multi-layer coupling quantum well systems.展开更多
基金This work was Supported by "973" National Key Basic ResearchFoundation of China (No. 2003CB314707)National Natural Sci-ence Foundation of China (No. 60576016 ,10374001, and No.10434030).
文摘We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alqy Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential barrier layer, while Alq3 is used as potential well layer and emitting layer. Compared with double-layer structure, the luminescent characteristics of organic samples and diodes with quantum well structure are investigated and the quantum well structure helps the energy transfer between well layer and barrier layer. The quantum well structure makes carriers disperse in the different well layers and then increases the number of excitons to enhance the efficiency of the recombination.
文摘By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated within the framework of dielectric continuum approximation. Numerical calculation on seven-layer AlxGal-xAs/GaAs systems have been performed. Via the numerical results in this work and previous works, the general characters of the IO phonon modes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as a generalization of previous works on IO phonon modes in some fLxed layer-number quantum well systems, and it provides a uniform method to investittate the effects of IO phonons on the multi-layer coupling quantum well systems.
