Dealloyed ribbons with a layer of networked nanoporous structure of different pore sizes were fabricated by dealloying the as-spun Mg_(65)Cu_(25-x)Ag_(x)Y_(10)(x=0,5,10,at.%)ribbons in dilute H_(2)SO_(4) solution in o...Dealloyed ribbons with a layer of networked nanoporous structure of different pore sizes were fabricated by dealloying the as-spun Mg_(65)Cu_(25-x)Ag_(x)Y_(10)(x=0,5,10,at.%)ribbons in dilute H_(2)SO_(4) solution in order to enhance the degradation efficiency of pesticide wastewater.Compared to the as-spun ribbons,it is found that the dealloyed ribbons with the networked nanoporous structure exhibit higher degradation efficiency due to their large specific surface areas and enough active sites for the degradation process.Both the average pore sizes of the nanoporous structure and the degradation efficiency of the pesticide wastewater increase with the increase of Ag addition in the dealloyed ribbons.The maximum degradation efficiency up to 95.8%is obtained for the Mg_(65)Cu_(15)Ag_(10)Y_(10)dealloyed ribbon under the optimal conditions of pH being 3,the initial cis-cypermethrin concentration being 500 mg/L,and the dosage of dealloyed ribbon being 1.33 g/L.展开更多
Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication waveleng...Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge_(25)Ga)5Sb_(10)S_(65)(doped with Er^(3+)) spacer layer surrounded by two 5-layer As_(40)Se_(60)/Ge_(25)Sb_(5)S_(70) reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.展开更多
Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current pr...Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles.Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs.展开更多
基金the financial supports from State Key Laboratory of Light Alloy Casting Technology for High-end Equipmentthe Natural Science Foundation of Liaoning Province,China(No.2020-KF-14-03)the National Natural Science Foundation of China(No.51775353)。
文摘Dealloyed ribbons with a layer of networked nanoporous structure of different pore sizes were fabricated by dealloying the as-spun Mg_(65)Cu_(25-x)Ag_(x)Y_(10)(x=0,5,10,at.%)ribbons in dilute H_(2)SO_(4) solution in order to enhance the degradation efficiency of pesticide wastewater.Compared to the as-spun ribbons,it is found that the dealloyed ribbons with the networked nanoporous structure exhibit higher degradation efficiency due to their large specific surface areas and enough active sites for the degradation process.Both the average pore sizes of the nanoporous structure and the degradation efficiency of the pesticide wastewater increase with the increase of Ag addition in the dealloyed ribbons.The maximum degradation efficiency up to 95.8%is obtained for the Mg_(65)Cu_(15)Ag_(10)Y_(10)dealloyed ribbon under the optimal conditions of pH being 3,the initial cis-cypermethrin concentration being 500 mg/L,and the dosage of dealloyed ribbon being 1.33 g/L.
基金supported by the National Natural Science Foundation of China(No.61308092)the Natural Science Foundation of Liaoning Province of China(No.2013010590-401/20131116)
文摘Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge_(25)Ga)5Sb_(10)S_(65)(doped with Er^(3+)) spacer layer surrounded by two 5-layer As_(40)Se_(60)/Ge_(25)Sb_(5)S_(70) reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.
基金supported by the National Natural Science Foundation of China(Grant No.11574306)the China International Science and Technology Cooperation Program(Grant No.2014DFG62280)the National High Technology Program of China(Grant No.2015AA03A101)
文摘Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles.Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs.
