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6H-SiC单晶锭边缘的多晶环控制 被引量:3
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作者 封先锋 陈治明 蒲红斌 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第5期1124-1129,1140,共7页
6H-SiC晶体生长过程中单晶锭边缘形成的多晶环影响单晶体的品质。本研究制定了以改进坩埚系统结构为主、调整线圈与坩埚相对位置为辅的多晶环厚度控制方案,利用自制设备进行了6H-SiC晶体生长验证实验,实验结果显示所生长6H-SiC单晶体不... 6H-SiC晶体生长过程中单晶锭边缘形成的多晶环影响单晶体的品质。本研究制定了以改进坩埚系统结构为主、调整线圈与坩埚相对位置为辅的多晶环厚度控制方案,利用自制设备进行了6H-SiC晶体生长验证实验,实验结果显示所生长6H-SiC单晶体不但周边和表面光滑,未有多晶出现,还实现了显著的扩径生长。 展开更多
关键词 6H-sic 多晶sic 坩埚系统
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Dynamic indentation response of porous SiC/Ti-based metallic glass composite
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作者 Ben-peng WANG Lu WANG +3 位作者 Yun-fei XUE Yang-wei WANG Hai-feng ZHANG Hua-meng FU 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第12期3154-3160,共7页
Porous SiC/Ti-based metallic glass composite (Ti-BMGC), a new kind of composite, has significant application prospectin the field of light armor. To evaluate the dynamic mechanical response of the composite, dynamic V... Porous SiC/Ti-based metallic glass composite (Ti-BMGC), a new kind of composite, has significant application prospectin the field of light armor. To evaluate the dynamic mechanical response of the composite, dynamic Vickers hardness andindentation-induced deformation behavior were investigated by comparison with that under static indentation. The dynamic hardnesswas measured by a modified split Hopkinson pressure bar (SHPB). The dynamic hardness is obviously greater than the statichardness. The brittleness parameter under dynamic indentation is also greater than that under static indentation. Although thedynamic indentation induced more severe deformation behavior than the static indentation, the deformation and fracturecharacteristics in the two loading cases are nearly the same, both exhibiting extensive cracks in the SiC phase and severe plasticdeformation in the metallic glass phase. 展开更多
关键词 COMPOSITE porous sic metallic glass dynamic hardness deformation behavior
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Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide
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作者 郭辉 冯倩 +2 位作者 汤晓燕 张义门 张玉明 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期637-640,共4页
Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P^+) implantation into a Si... Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P^+) implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^+ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^+ polysilicon ohmic contact to n-type SiC are discussed. 展开更多
关键词 ohmic contact silicon carbide POLYSILICON specific contact resistance P^+ ion implantation
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