在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上...在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上、下两层光波导芯部横截面尺寸分别为29μm×19μm和31μm×20μm;两层波导的输出光斑尺寸相互匹配;两层波导传输损耗分别为1.00±0.32 d B/cm和0.78±0.35 d B/cm;两层光波导之间的串扰在17.7d B左右。这种玻璃基片上的双层多模光波导可以使板级光互连的互连密度增大一倍,提高EOCB的性能。展开更多
An initial structure design of MMI 1×8 optical power splitters is reported.The waveguide material is Si-based SiO2 Ge-doped and deposited by PECVD method.Embedded strip structure is implied in the section design....An initial structure design of MMI 1×8 optical power splitters is reported.The waveguide material is Si-based SiO2 Ge-doped and deposited by PECVD method.Embedded strip structure is implied in the section design.By using BPM-CAD,a favorable result is obtained that this device has a sound uniformity and fairly low loss.Meanwhile,simulations of designs with certain changed parameters is also implemented for a better design configuration.展开更多
文摘在光学玻璃基片上制作了双层掩埋式多模光波导芯片,这种芯片中的上、下两层光波导均通过熔盐离子交换和电场辅助离子迁移形成。对光波导的横截面以及输出光斑进行了观察,并进行了损耗和串扰测试。研究结果表明:双层多模光波导芯片中上、下两层光波导芯部横截面尺寸分别为29μm×19μm和31μm×20μm;两层波导的输出光斑尺寸相互匹配;两层波导传输损耗分别为1.00±0.32 d B/cm和0.78±0.35 d B/cm;两层光波导之间的串扰在17.7d B左右。这种玻璃基片上的双层多模光波导可以使板级光互连的互连密度增大一倍,提高EOCB的性能。
文摘An initial structure design of MMI 1×8 optical power splitters is reported.The waveguide material is Si-based SiO2 Ge-doped and deposited by PECVD method.Embedded strip structure is implied in the section design.By using BPM-CAD,a favorable result is obtained that this device has a sound uniformity and fairly low loss.Meanwhile,simulations of designs with certain changed parameters is also implemented for a better design configuration.
