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功率PHEMT器件大信号建模
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作者 刘军 孙玲玲 吴颜明 《半导体技术》 CAS CSCD 北大核心 2008年第S1期15-20,共6页
提出一种新的、可同时适用于GaAs、GaN基PHEMT/HEMT/HFET器件大/小信号等效电路模型。沟道电流模型方程连续、可导,可精确拟合实际器件正、反向区、截止区以及亚阈值区特性,且漏导精确,主结构跨导至少可精确拟合至3阶。电荷方程在实现... 提出一种新的、可同时适用于GaAs、GaN基PHEMT/HEMT/HFET器件大/小信号等效电路模型。沟道电流模型方程连续、可导,可精确拟合实际器件正、反向区、截止区以及亚阈值区特性,且漏导精确,主结构跨导至少可精确拟合至3阶。电荷方程在实现连续、高阶可导且导数精确的基础上,满足电荷守恒规律。模型综合考虑了器件弱雪崩击穿以及热效应特性,对器件跨导频率分布效应也作了灵活的考虑。模型以Verilog-A语言描述,并开发为DesignKit形式嵌入ADS2005A中。给出了对一GaAs基PHEMT器件建模结果,从大/小信号测量和仿真对比结果来看,模型已有较好精度,可供实用。 展开更多
关键词 GaAs/GaN PHEMT/HEMT/HFET 大/小信号 模型 VERILOG-A ADS2005A
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Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor
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作者 Kamal Hosen Md.Rasidul Islam Kong Liu 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2020年第6期757-763,I0003,共8页
The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extre... The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications. 展开更多
关键词 GRAPHENE Graphene field effect transistor Large signal Small-signal Channel length Channel width
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UHF power amplifier design in 0.35μm SiGe BiCMOS
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作者 宋家友 Li Zhiqun Wang Zhigong 《High Technology Letters》 EI CAS 2009年第2期147-150,共4页
A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V... A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS process.It was fully integrated excluding the inductors and the output matching network.Under a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 dBm.At output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,respectively.The chip size is 1.27mm ×0.9mm. 展开更多
关键词 power amplifier SIGE BICMOS heterojuncfion bipolar transistor
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130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz
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作者 张明名 吴宪顺 +2 位作者 李光福 王新 庄晴光 《Transactions of Tianjin University》 EI CAS 2016年第1期1-6,共6页
A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage amplifier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality... A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage amplifier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 d B from 101 GHz to 110 GHz. DC power consumption was 67.2 mW with V_D=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm. 展开更多
关键词 CMOS AMPLIFIER Marchand balun transmission line 100 GHz
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Loss of CO_2 sensing by the olfactory system of CNGA3 knockout mice
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作者 Jinlong HAN Minmin LUO 《Current Zoology》 SCIE CAS CSCD 北大核心 2010年第6期793-799,共7页
Atmospheric CO2 can signal the presence of food, predators or environmental stress and trigger stereotypical behaviors in both vertebrates and invertebrates. Recent studies have shown that the necklace olfactory syste... Atmospheric CO2 can signal the presence of food, predators or environmental stress and trigger stereotypical behaviors in both vertebrates and invertebrates. Recent studies have shown that the necklace olfactory system in mice sensitively detects CO2 in the air. Olfactory CO2 neurons are believed to rely on cyclic gnanosine monophosphate (cGMP) as the key second messenger; however, the specific ion channel underlying CO2 responses remains unclear. Here we show that CO2-evoked neuronal and behavioral responses require cyclic nucleotide-gated (CNG) channels consisting of the CNGA3 subunit. Through Ca2+-imaging, we found that CO2-triggered Ca2+ influx was abolished in necklace olfactory sensory neurons (OSNs) of CNGA3-knockout mice. Olfactory detection tests using a Go/No-go paradigm showed that these knockout mice failed to detect 0.5% CO2. Thus, sensitive detection of atmospheric CO2 depends on the function of CNG channels consisting of the CNGA3 subunit in necklace OSNs. These data support the important role of the necklace olfactory system in CO2 sensing and extend our understanding of the signal transduction pathway mediating CO2 detection in mammals [Current Zoology 56 (6): 793-799, 2010]. 展开更多
关键词 Olfactory sensory neurons Ca2+ imaging Go/No-go CGMP Guanylyl cyclase CNG channels
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