Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was empl...Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.展开更多
The 885 nm direct pumping directly into the^4F_(3/2)emitting level of Nd^(3+)is applied on an Nd:Lu_(0.15)Y_(0.85)VO_4 crystal.The maximum output power of 2.8 W for continuous wave(CW)operation is obtained.For Q-switc...The 885 nm direct pumping directly into the^4F_(3/2)emitting level of Nd^(3+)is applied on an Nd:Lu_(0.15)Y_(0.85)VO_4 crystal.The maximum output power of 2.8 W for continuous wave(CW)operation is obtained.For Q-switched operation,the maximum average output power is 1.2 W with pulse repetition of 23.69 kHz and pulse width of 35 ns at the pump power of 27.9 W.The high-quality fundamental transverse mode can be observed owing to the reduction of thermal effect for Nd:Lu_(0.15)Y_(0.85)VO_4 crystal by 885 nm direct pumping.展开更多
文摘Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.
基金supported by the Natural Science Foundation of Heilongjiang Province of China(No.F201335)the Science and Technology Research Projects of Heilongjiang Province Education Department(No.12531751)
文摘The 885 nm direct pumping directly into the^4F_(3/2)emitting level of Nd^(3+)is applied on an Nd:Lu_(0.15)Y_(0.85)VO_4 crystal.The maximum output power of 2.8 W for continuous wave(CW)operation is obtained.For Q-switched operation,the maximum average output power is 1.2 W with pulse repetition of 23.69 kHz and pulse width of 35 ns at the pump power of 27.9 W.The high-quality fundamental transverse mode can be observed owing to the reduction of thermal effect for Nd:Lu_(0.15)Y_(0.85)VO_4 crystal by 885 nm direct pumping.
