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大长尺寸光滑精密导轨直线度测量 被引量:3
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作者 严杰文 司卫征 《河南科技》 2013年第2X期93-93,共1页
本文对精密大长尺寸导轨的直线度进行测量,采用激光干涉测量方法和有直线基准的节距法对50m光滑精密导轨进行水平面以及垂直面进行了对比测量,依据两种不同测量方法测量直线度的分析,比较两种方法优势特点,为大尺寸导轨检测提供测量依... 本文对精密大长尺寸导轨的直线度进行测量,采用激光干涉测量方法和有直线基准的节距法对50m光滑精密导轨进行水平面以及垂直面进行了对比测量,依据两种不同测量方法测量直线度的分析,比较两种方法优势特点,为大尺寸导轨检测提供测量依据。实验表明,采用双频激光干涉仪测量直线度方便、快捷、直观。 展开更多
关键词 大长尺寸 激光干涉 直线度 测量
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A new measuring method for maximal length, width and thickness dimensions of coarse aggregates
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作者 段跃华 张肖宁 吴传海 《Journal of Central South University》 SCIE EI CAS 2011年第6期2150-2156,共7页
In order to establish a new method for measuring the dimensions of coarse aggregates, five different-size flat and elongated (F&E) coarse aggregates were glued into two specimens by epoxy resin, respectively, and ... In order to establish a new method for measuring the dimensions of coarse aggregates, five different-size flat and elongated (F&E) coarse aggregates were glued into two specimens by epoxy resin, respectively, and slice images were obtained by X-ray CT, then the aggregates were extracted by the fuzzy c-means clustering algorithm. Attributions of the particle on different cross-sections were determined by the ‘overlap area method’. And unified three-dimensional Cartesian coordinate system was established based on continuous slice images. The coefficient values of spherical harmonics descriptor representing particles surface profile were gained, then each scanned particle was represented by 60×120 discrete points conformably with spherical harmonics descriptor. The chord length and direction angles were determined by the calculation. With the major axis (L) and orthogonal axis (W and T), the calculated results were compared with those measured by caliper. It is concluded that the new L, W, and T dimension measuring method is able to take the place of the present manual measurement. 展开更多
关键词 coarse aggregate flat and elongated (F&E) aggregate X-ray CT digital image processing fuzzy c-means clustering overlap area method spherical harmonics
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Oxygen Induced Limitation on Grain Growth in RF Sputtered Indium Tin Oxide Thin Films
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作者 Buddhi Sagar Lamsal Yung Huh +2 位作者 Mukul Dubey Manoj KC Qi Hua Fan 《Journal of Energy and Power Engineering》 2014年第7期1232-1236,共5页
ITO (indium tin oxide) thin films were deposited onto glass substrates by RF (radio frequency) magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substr... ITO (indium tin oxide) thin films were deposited onto glass substrates by RF (radio frequency) magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen. 展开更多
关键词 SPUTTERING thin film grain growth.
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