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A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors
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作者 齐臣杰 傅军 +1 位作者 王军军 刘理天 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第11期1398-1402,共5页
A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane... A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized. 展开更多
关键词 deep trench field limiting ring breakdown voltage
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