[Objective] Cloning of the AtrMYB transcription factor gene from Acer truncatum was conducted to further explore the red leaf development mechanism and breed cultivars of colored-leaf maple. [Method] The Acer truncat...[Objective] Cloning of the AtrMYB transcription factor gene from Acer truncatum was conducted to further explore the red leaf development mechanism and breed cultivars of colored-leaf maple. [Method] The Acer truncatum ‘Luhong No.1＇ cultivar was used as the material for cloning the MYB gene by mean of RTPCR and RACE-PCR. [Results] Sequence analysis showed that the fragment contained a full coding region of 831 bp encoding 276 amino acid residues with a molecular weight of 32.17 kD and a molecular formula C_（1430）H_（14052）N_（2247）O_（406）S_（14）. The gene was named as AtrMYB with a Gen Bank accession number of 1825712. This coded protein had apI of 9.44. The results showed that the AtrMYB exhibited typical features of the R2R3-MYB domain. The AtrMYB was highly homologous with the MYB of other species at nucleotide and amino acid levels. The AtrMYB had no signal peptide, but a nuclear localization signal. The phylogenetic tree showed that the AtrMYB was at the same clade as the MYB from Citrus sinensis. [Conclusion] The AtrMYB was cloned from Acer truncatum ‘Luhong No.1＇ cultivar. These results have provided a foundation for further purification and identification of target protein and function study of the AtrMYB.展开更多
Concentrations of Pb, Cd, Cu, Zn, Cr and Ni in soybean (Glycine max L.) grown near the Dabaoshan Mine were investigated, and their potential risk to the health of inhabitants was estimated. In the Fandong (FD) and Zho...Concentrations of Pb, Cd, Cu, Zn, Cr and Ni in soybean (Glycine max L.) grown near the Dabaoshan Mine were investigated, and their potential risk to the health of inhabitants was estimated. In the Fandong (FD) and Zhongxin (ZX) villages, which are near the Dabaoshan mineral deposit, concentrations of Pb (0.34 mg kg^(-1) for FD), Cd (0.23 mg kg^(-1) for ZX) and Cr (1.14 and 1.75 mg kg^(-1) for FD and ZX, respectively) in the seeds of soybean exceeded the tolerance limit set by Chinese standards. The estimated daily intakes (EDIs) from consumption of soybean seeds for FD inhabitants were 0.570, 0.170, 38.550, 142.400, 1.910 and 14.530 μg d^(-1) kg^(-1) boby weight for Pb, Cd, Cu, Zn, Cr and Ni, respectively. Our results indicate that soybeans grown in the vicinity of the Dabaoshan Mine accumulate some metals, and the seeds pose a potential health risk to the local inhabitants.展开更多
In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently ann...In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K （TA） was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413,450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broad- ening of the absorption band between 460 cm^-1 and 510 cm^-1, which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm^-1 tended towards to a higher wavelength.展开更多
Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement an...Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement and electronic properties of a coherent heterostructure of single-layer graphene and α-Al2O3（0001）. The analysis of the atomic arrangement of single-layer graphene on α-Al2O3（0001） revealed an apparentcontradiction. The in-plane analysis shows that single-layer graphene grows not in a single-crystalline epitaxial manner, but rather in polycrystalline form, with two strongly pronounced preferred orientations. This suggests relatively weak interfacial interactions are operative. However, we demonstrate that unusually strong physical interactions between graphene and α-Al2O3（0001） exist, as evidenced by the small separation between the graphene and the α-Al2O3（0001） surface. The interfacial interaction is shown to be dominated by the electrostatic forces involved in the graphene n-system and the unsaturated electrons of the topmost O layer of α-Al2O3（0001）, rather than the van der Waals interactions. Such features causes graphene hole doping and enable the graphene to slide on the α-Al2O3（0001） surface with only a small energy barrier despite the strong interfacial interactions.展开更多
基金Supported by Agricultural Elite Cultivar Project of Shandong Province(lkz2014[96])~~
文摘[Objective] Cloning of the AtrMYB transcription factor gene from Acer truncatum was conducted to further explore the red leaf development mechanism and breed cultivars of colored-leaf maple. [Method] The Acer truncatum ‘Luhong No.1＇ cultivar was used as the material for cloning the MYB gene by mean of RTPCR and RACE-PCR. [Results] Sequence analysis showed that the fragment contained a full coding region of 831 bp encoding 276 amino acid residues with a molecular weight of 32.17 kD and a molecular formula C_（1430）H_（14052）N_（2247）O_（406）S_（14）. The gene was named as AtrMYB with a Gen Bank accession number of 1825712. This coded protein had apI of 9.44. The results showed that the AtrMYB exhibited typical features of the R2R3-MYB domain. The AtrMYB was highly homologous with the MYB of other species at nucleotide and amino acid levels. The AtrMYB had no signal peptide, but a nuclear localization signal. The phylogenetic tree showed that the AtrMYB was at the same clade as the MYB from Citrus sinensis. [Conclusion] The AtrMYB was cloned from Acer truncatum ‘Luhong No.1＇ cultivar. These results have provided a foundation for further purification and identification of target protein and function study of the AtrMYB.
基金Supported by the National Natural Science Foundation of China (No. 40871221)
文摘Concentrations of Pb, Cd, Cu, Zn, Cr and Ni in soybean (Glycine max L.) grown near the Dabaoshan Mine were investigated, and their potential risk to the health of inhabitants was estimated. In the Fandong (FD) and Zhongxin (ZX) villages, which are near the Dabaoshan mineral deposit, concentrations of Pb (0.34 mg kg^(-1) for FD), Cd (0.23 mg kg^(-1) for ZX) and Cr (1.14 and 1.75 mg kg^(-1) for FD and ZX, respectively) in the seeds of soybean exceeded the tolerance limit set by Chinese standards. The estimated daily intakes (EDIs) from consumption of soybean seeds for FD inhabitants were 0.570, 0.170, 38.550, 142.400, 1.910 and 14.530 μg d^(-1) kg^(-1) boby weight for Pb, Cd, Cu, Zn, Cr and Ni, respectively. Our results indicate that soybeans grown in the vicinity of the Dabaoshan Mine accumulate some metals, and the seeds pose a potential health risk to the local inhabitants.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10705037 and 10975165)
文摘In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K （TA） was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413,450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broad- ening of the absorption band between 460 cm^-1 and 510 cm^-1, which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm^-1 tended towards to a higher wavelength.
基金We are grateful to the ＇Chebishev＇ and ＇Lomonosov＇ supercomputers of Moscow State University for providing the chance of using a cluster computer for quantum-chemical calculations. S.E. thanks Prof. H. Kondo （Keio University） and Prof. T. Shimada （Hirosaki University） for NIXSW measurements. This work was partly supported by Grants-in-Aid for Young Scientists B （Grant No. 22760033） from the Japan Society for the Promotion of Science. The present work has been performed under the approval of the Photon Factory Program Advisory Committee （PF PAC Nos. 2010G660 and 2012G741）. P.V.A., P.B.S. and L.Y.A. acknowledge the support from the Russian Science Foundation （project No. 14-13-00139）.
文摘Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement and electronic properties of a coherent heterostructure of single-layer graphene and α-Al2O3（0001）. The analysis of the atomic arrangement of single-layer graphene on α-Al2O3（0001） revealed an apparentcontradiction. The in-plane analysis shows that single-layer graphene grows not in a single-crystalline epitaxial manner, but rather in polycrystalline form, with two strongly pronounced preferred orientations. This suggests relatively weak interfacial interactions are operative. However, we demonstrate that unusually strong physical interactions between graphene and α-Al2O3（0001） exist, as evidenced by the small separation between the graphene and the α-Al2O3（0001） surface. The interfacial interaction is shown to be dominated by the electrostatic forces involved in the graphene n-system and the unsaturated electrons of the topmost O layer of α-Al2O3（0001）, rather than the van der Waals interactions. Such features causes graphene hole doping and enable the graphene to slide on the α-Al2O3（0001） surface with only a small energy barrier despite the strong interfacial interactions.
