Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed ...Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed of SCDI device is 42μs.Under the condition of V g=-8V, V s=8V,the erasing speed is 24ms.Compared with the same size of conventional flash memory device whose corresponding parameters are 500μs and 24ms,respectively,the performance of SCDI device is remarkably improved.During manufacturing of SCDI device,the key technologies are to make the shallow step with appropriate depth and angle,along with eliminating the etch damage during the process of Si 3N 4 spacer.展开更多
This paper reviewed two types of network storage technique: NAS and SAN. After comparing and analyzing, it concluded that the ultimate realization of network storage will be in the eventual convergence of NAS and SAN ...This paper reviewed two types of network storage technique: NAS and SAN. After comparing and analyzing, it concluded that the ultimate realization of network storage will be in the eventual convergence of NAS and SAN architectures. Currently, all the integration methods are based on the architecture level. This paper presented a device level integration scheme based on IXP1200 network processor. The device can be used as an NAS file server or an SAN’s storage node. Furthermore, it can be used as a bridge to connect NAS and SAN, and then be shared by their clients.展开更多
文摘Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed of SCDI device is 42μs.Under the condition of V g=-8V, V s=8V,the erasing speed is 24ms.Compared with the same size of conventional flash memory device whose corresponding parameters are 500μs and 24ms,respectively,the performance of SCDI device is remarkably improved.During manufacturing of SCDI device,the key technologies are to make the shallow step with appropriate depth and angle,along with eliminating the etch damage during the process of Si 3N 4 spacer.
文摘This paper reviewed two types of network storage technique: NAS and SAN. After comparing and analyzing, it concluded that the ultimate realization of network storage will be in the eventual convergence of NAS and SAN architectures. Currently, all the integration methods are based on the architecture level. This paper presented a device level integration scheme based on IXP1200 network processor. The device can be used as an NAS file server or an SAN’s storage node. Furthermore, it can be used as a bridge to connect NAS and SAN, and then be shared by their clients.
