The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate na...The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.展开更多
The authors study the Cauchy problem for the semi-linear damped wave equation utt-△u＋b（t）ut=f（u）,u（0,χ）=u0（χ）,ut（0,χ）=u1（χ） in any space dimension n ≥ 1. It is assumed that the time-dependent dampin...The authors study the Cauchy problem for the semi-linear damped wave equation utt-△u＋b（t）ut=f（u）,u（0,χ）=u0（χ）,ut（0,χ）=u1（χ） in any space dimension n ≥ 1. It is assumed that the time-dependent damping term b（t）〉 0 is effective, and in particular tb（t） →∞ as t →∞. The global existence of small energy data solutions for｜f（u）｜≈｜u｜^p in the supercritical case of p 〉 1＋ 2/n and p ≤n/n-2 for n ≥ 3 is proved.展开更多
文摘The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.
基金Project supported by a grant of DFG (Deutsche Forschungsgemeinschaft) for the research project "Influence of time-dependent coefficients on semi-linear wave models" (No. RE 961/17-1)
文摘The authors study the Cauchy problem for the semi-linear damped wave equation utt-△u＋b（t）ut=f（u）,u（0,χ）=u0（χ）,ut（0,χ）=u1（χ） in any space dimension n ≥ 1. It is assumed that the time-dependent damping term b（t）〉 0 is effective, and in particular tb（t） →∞ as t →∞. The global existence of small energy data solutions for｜f（u）｜≈｜u｜^p in the supercritical case of p 〉 1＋ 2/n and p ≤n/n-2 for n ≥ 3 is proved.
