催化剂辅助化学气相沉积法制备InN纳米线

采用催化剂辅助化学气相沉积法,通过固-液-气(V-L-S)机理控制在硅衬底上制备了高质量的InN纳米线。利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征。分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长。室温PL光谱表明,制备的InN纳米线在1580nm(0.78eV)处存在很强的无缺陷的带边发射,与六方纤锌矿结构InN单晶发射峰位置一致,表现出良好的光电性能。

CVD和CVD镀层工具钢的热处理

应用气相沉积技术可以获得微米级或纳米级的单层或多层新颖材料。其中硬质膜在机械零件和加工工具上的应用一直是人们最感兴趣的重要方面。目前,对涂层硬质合金主要应用CVD技术,涂层高速钢和高合金钢主要应用PVD和PECVD技术。本文阐述具有高淬透性、二次硬化能力和淬火加热奥氏体化温度接近CVD涂覆温度的工具钢,在CVD涂覆的前后采用强化的热处理和表面保护的工艺方法进行处理,可以获得具有优良的基材性能和优异的CVD涂层的零件,将大大提高零件的使用寿命。

Preparation of ultrafine rhenium powders by CVD hydrogen reduction of volatile rhenium oxides

A novel CVD process for the preparation of ultrafine rhenium powders was investigated using ammonium perrhenate as starting materials. In the process, volatile rhenium oxides, such as ReO4 and Re2O7, were vaporized under a controlled oxidizing atmosphere via the pyrolysis of ammonium perrhenate, and carried into reduction zone by carrier gas, and there reduced into rhenium powders by hydrogen gas. Thermodynamic calculations indicated that Re207 could be prevented from further decomposition through controlling the oxygen partial pressure higher than 10 1.248 Pa in the pyrolysis of ammonium perrhenate. This result was further validated via DSC-TGA analysis of ammonium perrhenate. The typical rhenium powders prepared by the CVD method proposed show irregular polyhedron morphology with particle size in the range of 100-800 nm and a Ds0 of 308 nm. The specific surface area and oxygen content were measured to be 4.37 m^2/g and 0.45%, respectively.

Preparation and mechanical properties of carbon/carbon composites with high textured pyrolytic carbon matrix

Short carbon fiber felts with an initial porosity of 89.5% were deposited by isobaric, isothermal chemical vapor infiltration using natural gas as carbon source. The bulk density of the deposited carbon/carbon （C/C） composites was 1.89 g/cm3 after depositing for 150 h. The microstructure and mechanical properties of the C/C composites were studied by polarized light microscopy, X-ray diffraction, scanning electron microscopy and three-point bending test. The results reveal that high textured pyrolytic carbon is deposited as the matrix of the composites, whose crystalline thickness and graphitization degree highly increase after heat treatment. A distinct decrease of the flexural strength and modulus accompanied by the increase of the toughness of the C/C composites is found to be correlated with the structural changes in the composites during the heat treatment process.

ZnO Films Synthesized by Solid-Source Chemical Vapor Deposition with c-Axis Parallel to Substrate

ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.

Characterization of SiC nanowires prepared on C/C composite without catalyst by CVD

SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.

Microstructures and formation mechanism of headstand pyrocarbon cones developed by electromagnetic-field-assisted CVD

Novel headstand pyrocarbon cones （HPCs） with hollow structure were developed on the surfaces of pyrocarbon layers of the carbon/carbon （C/C） composites at 650-750 °C by the electromagnetic-field-assisted chemical vapor deposition in the absence of catalysts. The fine microstructures of the HPCs were characterized by high-resolution transmission electron microscopy. The results show that the textural features of the HPCs directly transfer from turbostratic structure in roots to a well-ordered high texture in stems. And the degree of high texture ordering decreases gradually from the stem to the tail of the HPCs. The formation mechanism of the HPCs was inferred as the comprehensive effect of polarization induction on electromagnetic fields and particle-filler property under disruptive discharge.

Effect of deposition parameters on micro-and nano-crystalline diamond films growth on WC-Co substrates by HFCVD

The characteristics of hot filament chemical vapor deposition（HFCVD） diamond films are significantly influenced by the deposition parameters, such as the substrate temperature, total pressure and carbon concentration. Orthogonal experiments were introduced to study the comprehensive effects of such three parameters on diamond films deposited on WC-Co substrates. Field emission scanning electron microscopy, atomic force microscopy and Raman spectrum were employed to analyze the morphology, growth rate and composition of as-deposited diamond films. The morphology varies from pyramidal to cluster features with temperature decreasing. It is found that the low total pressure is suitable for nano-crystalline diamond films growth. Moreover, the substrate temperature and total pressure have combined influence on the growth rate of the diamond films.

Enhancement of nucleation of diamond films deposited on copper substrate by nickel modification layer

A Ni layer with a thickness of about 100 nm was sputtered on Cu substrates,followed by an ultrasonic seeding with nanodiamond suspension.High-quality diamond film with its crystalline grains close to thermal equilibrium shape was deposited on Cu substrates by hot-filament chemical vapor deposition（HF-CVD）,and the sp2 carbon content was less than 5.56%.The nucleation and growth of diamond film were investigated by micro-Raman spectroscopy,scanning electron microscopy,and X-ray diffraction.The results show that the nucleation density of diamond on the Ni-modified Cu substrates is 10 times higher than that on blank Cu substrates.The enhancement mechanism of the nucleation kinetics by Ni modification layer results from two effects：namely,the nanometer rough Ni-modified surface shows an improved absorption of nanodiamond particles that act as starting points for the diamond nucleation during HF-CVD process;the strong catalytic effect of the Ni-modified surface causes the formation of graphite layer that acts as an intermediate to facilitate diamond nucleation quickly.

In-situ homogeneous synthesis of carbon nanotubes on aluminum matrix and properties of their composites

Using nickel catalyst supported on aluminum powders, carbon nanotubes （CNTs） were successfully synthesized in aluminum powders by in-situ chemical vapor deposition at 650 ℃. Structural characterization revealed that the as-grown CNTs possessed higher graphitization degree and straight graphite shell. By this approach, more homogeneous dispersion of CNTs in aluminum powders was achieved compared with the traditional mechanical mixture methods. Using the in-situ synthesized CNTs/Al composite powders and powder metallurgy process, CNTs/Al bulk composites were prepared. Performance testing showed that the mechanical properties and dimensional stability of the composites were improved obviously, which was attributed to the superior dispersion of CNTs in aluminum matrix and the strong interfacial bonding between CNTs and matrix.

Growth behavior of CVD diamond in microchannels of Cu template

Deposition of diamond inside the trenches or microchannels by chemical vapor deposition （CVD） is limited by the diffusion efficiency of important radical species for diamond growth （H, CH3） and the pore depth of the substrate template. By ultrasonic seeding with nanodiamond suspension, three-dimensional （3D） penetration structure diamond was successfully deposited in cylindrical microchannels of Cu template by hot-filament chemical vapor deposition. Micro-Raman spectroscopy and scanning electron microscopy （SEM） were used to characterize diamond film and the effects of microchannel depth on the morphology, grain size and growth rate of diamond film were comprehensively investigated. The results show that diamond quality and growth rate sharply decrease with the increase of the depth of cylindrical microchannel. Individual diamond grain develops gradually from faceted crystals into micrometer cluster, and finally to ballas-type nanocrystalline one. In order to modify the rapid decrease of diamond quality and growth rate, a new hot filament apparatus with a forced gas flow through Cu microchannels was designed. Furthermore, the growth of diamond film by new apparatus was compared with that without a forced gas flow, and the enhancement mechanism was discussed.

Modification of ACFs by chemical vapor deposition and its application for removal of methyl orange from aqueous solution

Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.

Preparation and characterization of diamond film on Cu substrate using Cu-diamond composite interlayer

Large area diamond films were fabricated on copper substrates by a multi-step process comprised of electroplating Cu-diamond composite layer on Cu substrate, plating a Cu layer to fix the protruding diamond particles, and depositing continuous diamond film on composite interlayer by hot-filament chemical vapor deposition （HFCVD）. The interface characteristics, internal stress and adhesion strength were investigated by scanning electron microscopy, Raman analysis and indentation test. The results show that the continuous film without cracks is successfully obtained. The microstructure of the film is a mixture of large cubo-octahedron grains grown from homo-epitaxial growth and small grains with （111） apparent facets grown from lateral second nuclei. The improved adhesion between diamond film and substrate results from the deep anchoring of the diamond particles in the Cu matrix and the low residual stress in the film.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .

Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD

Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance (ECR) microwave plasma enhanced metalorganic chemical vapor deposition (PEMOCVD).The crystalline phase structures of the films are investigated.The results of high resolution transmission electron microscopy (HRTEM) and X ray diffraction (XRD) indicate that high c axis oriented crystalline wurtzite GaN is grown on Si(001) but there is an amorphous layer formed naturally at GaN/Si interface.Both faces of the amorphous layer are flat and sharp,and the thickness of the layer is 2nm approximately cross the interface.The analysis supports that β GaN phase is not formed owing to the N x Si y amorphous layer induced by the reaction between N and Si during the initial nucleation stage.The results of XRD and atomic force microscopy (AFM) indicate that the conditions of substrate surface cleaned in situ by hydrogen plasma,GaN initial nucleation and subsequent growth are very important for the crystalline quality of GaN films.

Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells

A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.

Effect of heat treatment on microstructure and tensile strength of NiCoCrAl alloy sheet fabricated by EB-PVD

The NiCoCrAl alloy sheet was fabricated by electron beam physical vapor deposition technique and the effects of the heat treatment on the microstructure and tensile strength of the NiCoCrAl alloy sheet were investigated. The heat treatment at 1050 °C is favorable to improve the interface bonding between the columnar structures due to the disappearance of the intergranular gaps. Comparing with the thin NiCoCrAl alloy sheet before heat treatment, the Ni3Al phase appears in the NiCoCrAl alloy sheet after heat treatment, which is favorable to improve the interface bonding between the columnar structures. The increase in the tensile strength and elongation is attributed to the improvement of the interface bonding between the columnar structures. The residual stress in the NiCoCrAl alloy sheet after heat treatment is reduced significantly, which also confirms that the interface bonding is improved by the heat treatment.

Preparation, characterization and electrochemical properties of boron-doped diamond films on Nb substrates

A series of boron-doped polycrystalline diamond films were prepared by hot filament （HF） chemical vapor deposition on Nb substrates. The effects of B/C ratio of reaction gas on film morphology, growth rate, chemical bonding states, phase composition and electrochemical properties of each deposited sample were studied by scanning electron microscopy, Raman spectra, X-ray diffraction, microhardness indentation, and electrochemical analysis. Results show that the average grain size of diamond and the growth rate decrease with increasing the B/C ratio. The diamond films exhibit excellent adhesion under Vickers microhardness testing （9.8 N load）. The sample with 2% B/C ratio has a wider potential window and a lower background current as well as a faster redox reaction rate in H2SO4 solution and KFe（CN）6 redox system compared with other doping level electrodes.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.