干湿循环对混凝土内钢筋宏电流的影响

为研究干湿循环状态所导致的混凝土内钢筋腐蚀速度加剧,对长期干燥、长期浸泡、干湿循环三种状态下混凝土内钢筋的宏电池腐蚀电流进行了实验研究和理论分析。指出由于干湿循环状态同时避免了长期干燥状态下的混凝土电阻控制和长期浸泡状态下的氧扩散控制,因而将导致更高的混凝土内钢筋腐蚀速度。

亚硝酸离子浓度对混凝土中钢筋宏电池腐蚀电流的影响

在钢筋混凝土结构中,钢筋腐蚀防护的评价通常是基于微电池腐蚀理论,很少是基于宏电池腐蚀理论。本文基于宏电池腐蚀理论,将阴极钢筋和阳极钢筋分别制作成两个独立的砂浆试块,再将不同浓度的亚硝酸离子溶液添加到阳极试块中,通过分析阴极钢筋和阳极钢筋之间的宏电池电位差和宏电池腐蚀电流的变化,来评价亚硝酸离子对钢筋宏电池腐蚀的抑制效果。实验结果表明,充足的亚硝酸离子能够增加阳极钢筋的腐蚀阻抗,降低阴阳极钢筋间的宏电池电位差,从而降低钢筋间的宏电池腐蚀电流。亚硝酸离子浓度越高,对宏电池腐蚀的抑制效果越显著。

预埋式阳极梯监测系统研究

通过测量预埋式阳极梯监测系统中两极间的电位差及其宏电流,同时运用半电池电位法对阳极钢筋的锈蚀状态进行评估,分析得出监测系统电化学参数与钢筋锈蚀状态之间的定性关系。测试表明,该阳极梯监测系统可较好地判断钢筋的锈蚀状况,为其结构耐久性评定、剩余寿命预测提供了依据。

Formation of efficient dye-sensitized solar cells by introducing an interfacial layer of hierarchically ordered macro-mesoporous TiO_2 film

Hierarchically ordered macro-mesoporous TiO2 films (Ti-Ma-Me) were fabricated on fluorine-doped tin oxide (FTO) substrates through the confinement self-assembly method. The prepared Ti-Ma-Me possesses periodically ordered structure and a large specific surface area, which was applied as an interfacial layer between the nanocrystalline TiO2 film (P25-TiO2) and FTO electrode in the dye-sensitized solar cell (DSSC). The introduction of a Ti-Ma-Me interfacial layer increased the shortcircuit current density (Jsc) from 7.49 to 10.65 mA/cm2 and the open-circuit voltage (Voc) from 0.65 to 0.70 V as the result of its improved light harvesting efficiency by allowing for the high roughness factor and enhanced multiple internal reflection or scattering as well as reducing the back-transport reaction by blocking direct contact between the electrolyte and FTO electrode. Therefore, the photovoltaic conversion efficiency (η) was improved by 83% from 3.04% to 5.55%, as compared to a device using a bare P25 TiO2 photoanode.

Parallel arrays of Schottky barrier nanowire field effect transistors： Nanoscopic effects for macroscopic current output

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.

A trilayer process for the fabrication of Al phase qubits

Herein we develop an Al/AlOx/Al trilayer process, feasible to fabricate complex circuits with wiring crossovers, for the preparation of A1 junctions and phase qubits. The AlOx layer is obtained by in situ thermal oxidation, which provides high-quality junction tunnel barriers. The A1 junctions show a considerably low leakage current and the Josephson critical current density can be conveniently controlled in the range of a few to above 100 A/cm2, which is favorable in the phase qubit application. Macroscopic quantum tunneling, energy spectrum, energy relaxation time, Rabi oscillation, and Ramsey interference of the A1 phase qubits are measured, demonstrating clearly quantum coherent dynamics with a timescale of 10 ns. Further improvements of the coherent dynamic properties of the device are discussed.