Adhesion improvement of CVD diamond filim by introducing an electro-deposited interlayer; Agitation: the most versatile degree of freedom for surface finishers;Development of hydroxyapatite coating on porous titanium ...Adhesion improvement of CVD diamond filim by introducing an electro-deposited interlayer; Agitation: the most versatile degree of freedom for surface finishers;Development of hydroxyapatite coating on porous titanium via electro-deposition technique;Effect of intense magnetic field on CdTe electro-deposition;Electro deposition of Metallic Lithium on a Tungsten Electrode in 1-Butyl-l-methylpyrrolidinium Bis(tritluoromethanesulfone)imide Room-temperature Molten展开更多
SY509-3-85 [篇名] Adhesion improvements for diamond-like carbon films on polycarbonate and polymethylmethacrylate substrates by ion plating with inductively coupled plasma；SY509-3-86 [篇名] An expert system to suppor...SY509-3-85 [篇名] Adhesion improvements for diamond-like carbon films on polycarbonate and polymethylmethacrylate substrates by ion plating with inductively coupled plasma；SY509-3-86 [篇名] An expert system to support the optimization of ion plating process: an OLAP-based fuzzy-cum-GA approach；……展开更多
Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the...Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.展开更多
Nonpolar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire by metal-organic chemical vapor deposition （MOCVD） under different growth pressures. The as-grown films are investigated by optical mi...Nonpolar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire by metal-organic chemical vapor deposition （MOCVD） under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction （HRXRD） and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum （FWHM） along the c-axis [0001] increases while that along the m-axis [1100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio.展开更多
文摘Adhesion improvement of CVD diamond filim by introducing an electro-deposited interlayer; Agitation: the most versatile degree of freedom for surface finishers;Development of hydroxyapatite coating on porous titanium via electro-deposition technique;Effect of intense magnetic field on CdTe electro-deposition;Electro deposition of Metallic Lithium on a Tungsten Electrode in 1-Butyl-l-methylpyrrolidinium Bis(tritluoromethanesulfone)imide Room-temperature Molten
文摘SY509-3-85 [篇名] Adhesion improvements for diamond-like carbon films on polycarbonate and polymethylmethacrylate substrates by ion plating with inductively coupled plasma；SY509-3-86 [篇名] An expert system to support the optimization of ion plating process: an OLAP-based fuzzy-cum-GA approach；……
基金supported by the National Natural Science Foundation of China(Nos.61274113,61404091,61505144,51502203 and 51502204)the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciencesthe Tianjin Natural Science Foundation(Nos.14JCZDJC31500 and 14JCQNJC00800)
文摘Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60890192 and 50872146)
文摘Nonpolar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire by metal-organic chemical vapor deposition （MOCVD） under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction （HRXRD） and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum （FWHM） along the c-axis [0001] increases while that along the m-axis [1100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio.
