阀控式铅酸蓄电池(valve regulated lead acid battery,VRLA)广泛应用于储能系统中,准确估算其实时荷电状态(state of charge,SOC),对确保铅酸蓄电池安全供电具有重要意义。铅酸蓄电池的工作环境温度对其容量的影响不可忽视,然而,现有的...阀控式铅酸蓄电池(valve regulated lead acid battery,VRLA)广泛应用于储能系统中,准确估算其实时荷电状态(state of charge,SOC),对确保铅酸蓄电池安全供电具有重要意义。铅酸蓄电池的工作环境温度对其容量的影响不可忽视,然而,现有的SOC估算方法常将电池总容量视作固定值,这就导致了估算误差会随着环境温度的变化而积累,严重影响了SOC的估算精度。提出了一种基于容量修正的SOC估计方法,通过研究电池容量随温度的变化规律,引入了温度补偿对电池总容量进行修正。在此基础上,结合扩展卡尔曼滤波(EKF)算法进行不同温度下的SOC实时估计,并对容量修正后的SOC估计值与一般算法SOC估计值进行比较。仿真和实验结果表明,所提出的SOC估算方法能够提高不同环境温度下的铅酸蓄电池SOC估计精度。展开更多
A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanosca...A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.展开更多
文摘阀控式铅酸蓄电池(valve regulated lead acid battery,VRLA)广泛应用于储能系统中,准确估算其实时荷电状态(state of charge,SOC),对确保铅酸蓄电池安全供电具有重要意义。铅酸蓄电池的工作环境温度对其容量的影响不可忽视,然而,现有的SOC估算方法常将电池总容量视作固定值,这就导致了估算误差会随着环境温度的变化而积累,严重影响了SOC的估算精度。提出了一种基于容量修正的SOC估计方法,通过研究电池容量随温度的变化规律,引入了温度补偿对电池总容量进行修正。在此基础上,结合扩展卡尔曼滤波(EKF)算法进行不同温度下的SOC实时估计,并对容量修正后的SOC估计值与一般算法SOC估计值进行比较。仿真和实验结果表明,所提出的SOC估算方法能够提高不同环境温度下的铅酸蓄电池SOC估计精度。
文摘A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.