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微波毫米波宽带单片低噪声放大器 被引量:5
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作者 彭龙新 李建平 《固体电子学研究与进展》 CAS CSCD 北大核心 2008年第2期203-207,共5页
推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6~18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRou... 推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6~18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRout≤2.0,1分贝压缩点输出功率P1dB≥11dBm。第二种放大器的工作频带为26~40GHz,测得增益G≥17dB,噪声系数NF约为2.0dB,输入、输出驻波VSWR≤2.5,1分贝压缩点输出功率P1dB≥10dBm。两种电路的测试结果验证了设计的正确性。 展开更多
关键词 宽带反馈放大器 低噪声 单片集成电路
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Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier
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作者 张为 宋博 +5 位作者 付军 王玉东 崔杰 李高庆 张伟 刘志宏 《Transactions of Tianjin University》 EI CAS 2014年第4期299-309,共11页
A wideband dual-feedback low noise amplifier (LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor (HBT) technology. The design analysis in terms of gain, input and output match... A wideband dual-feedback low noise amplifier (LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor (HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively. 展开更多
关键词 WIDEBAND dual-feedback low noise amplifier (LNA) SiGe heterojunction bipolar transistor
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