We propose a scheme to simultaneously widen and heighten the high-order harmonic plateau on a large scale. More specifically, by adopting a united two-atom system with a suitable inter-nuclear separation instead of a ...We propose a scheme to simultaneously widen and heighten the high-order harmonic plateau on a large scale. More specifically, by adopting a united two-atom system with a suitable inter-nuclear separation instead of a single-atom, the harmonic plateau is widened from Ip ＋ 3.2Up to Ip ＋8.5Up; further, by adopting the combined pulse, the extended plateau （harmonics near Ip＋ 5.6Up） is selectively heightened in excess of 4 orders of magnitude compared with the case of the low-frequency pulse alone. By means of the wavelet transform for the induced dipole of these harmonics, a single x-ray pulse as short as 210 asec is achieved.展开更多
Effect of width ratio on the etching behaviour of joint channel structure is studied. By theory and experiments, the etching behaviors of joint channel with different width ratios are compared. The results show that t...Effect of width ratio on the etching behaviour of joint channel structure is studied. By theory and experiments, the etching behaviors of joint channel with different width ratios are compared. The results show that the effect of width ratio on the etching behavior is much different for the narrow-wide joint channel and the wide-narrow structure. For the narrow-wide joint channel,the etching process depends not only on the width ratio but also on the width of the channel. The etching rate and concentration of etching front at each stage are very close with the same width ratio. The etching time required at each stage increases with the channel width, but the final total etching time is very close if the length of the wide channel is much longer. For the wide-narrow joint channel, the etching process depends only on the width ratio. For wide-narrow joint channel, the etching process, including the required etching time, is absolutely the same with the same width ratio. The etching rate and concentration of etching front at each stage increases with the rise of the width ratio, while the total etching time decreases with the increase of width ratio.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No. 10474028
文摘We propose a scheme to simultaneously widen and heighten the high-order harmonic plateau on a large scale. More specifically, by adopting a united two-atom system with a suitable inter-nuclear separation instead of a single-atom, the harmonic plateau is widened from Ip ＋ 3.2Up to Ip ＋8.5Up; further, by adopting the combined pulse, the extended plateau （harmonics near Ip＋ 5.6Up） is selectively heightened in excess of 4 orders of magnitude compared with the case of the low-frequency pulse alone. By means of the wavelet transform for the induced dipole of these harmonics, a single x-ray pulse as short as 210 asec is achieved.
基金the State Key Development Program for Basic Research of China(No.2006CB300405)~~
文摘Effect of width ratio on the etching behaviour of joint channel structure is studied. By theory and experiments, the etching behaviors of joint channel with different width ratios are compared. The results show that the effect of width ratio on the etching behavior is much different for the narrow-wide joint channel and the wide-narrow structure. For the narrow-wide joint channel,the etching process depends not only on the width ratio but also on the width of the channel. The etching rate and concentration of etching front at each stage are very close with the same width ratio. The etching time required at each stage increases with the channel width, but the final total etching time is very close if the length of the wide channel is much longer. For the wide-narrow joint channel, the etching process depends only on the width ratio. For wide-narrow joint channel, the etching process, including the required etching time, is absolutely the same with the same width ratio. The etching rate and concentration of etching front at each stage increases with the rise of the width ratio, while the total etching time decreases with the increase of width ratio.
