The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creati...The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.展开更多
Substitution of lead(Pb)with tin(Sn)is a very important way to reduce the bandgap of metal halide perovskite for applications in solar cells,and near infrared(NIR)light-emitting diodes(LEDs),etc.However,mixed Pb/Sn pe...Substitution of lead(Pb)with tin(Sn)is a very important way to reduce the bandgap of metal halide perovskite for applications in solar cells,and near infrared(NIR)light-emitting diodes(LEDs),etc.However,mixed Pb/Sn perovskite becomes very disordered with high trap density when the Sn molar ratio is less than 20%.This limits the applications of mixed Pb/Sn perovskites in optoelectronic devices such as wavelength tunable NIR perovskite LEDs(Pe LEDs).In this work,we demonstrate that alkali cations doping can release the microstrain and passivate the traps in mixed Pb/Sn perovskites with Sn molar ratios of less than 20%,leading to higher carrier lifetime and photoluminescence quantum yield(PLQY).The external quantum efficiency(EQE)of Sn_(0.2)Pb_(0.8)-based NIR Pe LEDs is dramatically enhanced from 0.1%to a record value of 9.6%(emission wavelength:868 nm).This work provides a way of making high quality mixed Pb/Sn optoelectronic devices with small Sn molar ratios.展开更多
文摘The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.
基金the financial support of the National Natural Science Foundation of China(51872161)Major Program of Shandong Provincial Natural Science Foundation(ZR2017ZB0316)+3 种基金the financial support of the National Natural Science Foundation of China(51872274)the Fundamental Research Funds for the Central Universities(WK2060190100)the National Key Research and Development Program of China(2017YFA0206600)the National Natural Science Foundation of China(51773045,21772030,51922032,and 21961160720)for financial support。
文摘Substitution of lead(Pb)with tin(Sn)is a very important way to reduce the bandgap of metal halide perovskite for applications in solar cells,and near infrared(NIR)light-emitting diodes(LEDs),etc.However,mixed Pb/Sn perovskite becomes very disordered with high trap density when the Sn molar ratio is less than 20%.This limits the applications of mixed Pb/Sn perovskites in optoelectronic devices such as wavelength tunable NIR perovskite LEDs(Pe LEDs).In this work,we demonstrate that alkali cations doping can release the microstrain and passivate the traps in mixed Pb/Sn perovskites with Sn molar ratios of less than 20%,leading to higher carrier lifetime and photoluminescence quantum yield(PLQY).The external quantum efficiency(EQE)of Sn_(0.2)Pb_(0.8)-based NIR Pe LEDs is dramatically enhanced from 0.1%to a record value of 9.6%(emission wavelength:868 nm).This work provides a way of making high quality mixed Pb/Sn optoelectronic devices with small Sn molar ratios.
