MnQ_2(Q=S,Se,Te)and Te_4 Structures and Their Semiconductor Properties

The solvo―thermal technique is used for the synthesis of [Mn(en)_3]Te_4 (I).The crystal structure has been determined by single crystal X―ray diffraction techniques. Thecrystal belongs to the monoclinic, space group p2_1/c with unit cell:a = 0. 846 1(1), b=1.5653(2),c=1.426 9(2) nm, α = 90°, β=91. 37(1) (3)°, γ=90°, V=1. 889 3(4) nm^3, and Z=4. The resultsshow that the structure contains a linear chain Zintl anion, [Te_4 ]^(2-) and a complex cation,[Mn(en)_3l^(2+). Optical studies have been performed on the powder sample of I, suggesting that thecompound is a semiconductor with a band gap of 0. 73 eV. The semiconductor properties for MnQ_2(Q=S, Se, Te) and [Mn(en)_3]Te_4 have been discussed by molecular orbital theory.

Complex Permeability of Ferrites as Intrinsic and Extrinsic Properties

CIP （complex initial permeability） spectra of PF （polycrystalline ferrite） are studied both as intrinsic and extrinsic properties. In the former case, main steps of modeling, based on effects coming from polycrystal grain sizes distribution and defects, are described. The obtained relations work well in practice for PF with more or less normal MS （microstructure） and no size effects. Besides, fundamental connection between parameters of CIP and MS is found. Another case--PF with possible size effects （MnZn-ferrites） are studied experimentally for different sizes of cores, unveiling the dependence of phenomena on： dimensions of cross-section, number of turns, width of nonmagnetic gap.

Tunneling Conductance in a Normal Metal/Ferromagnetic Superconductor Nano-Junction at a Finite Temperature

In this study, we investigate the tunneling conductance at a finite temperature in a normal metal/ferromagnetic superconductor nano-junction where the ferromagnetic superconductor （FS） is in three different cooper pairing states： spin singlet s-wave pairing （SWP）, spin triplet opposite spin pairing （OSP）, and spin triplet equal spin pairing （ESP） while including Fermi wave mismatch （FWM） and effective mass mismatch （EMM） in two sides of the nano-junction. We find that the conductance shows clearly different behaviors all depending on the symmetries of cooper pairing in a manner that the conductance spectra shows a gap-like structure, two interior dips structure and zero bias peak for SWP, OSP, and ESP, respectively. Also, the effective FS gap （Δeff） is a linear and decreasing function of exchange field. The slope of （Δeff） versus exchange field for OSP is twice the SWP. Thus, we can determine the spin polarization of N/FS nano-junction based on the dependence of （Δeff） to exchange field.

Applications of MEMS devices in nanosatellite

micro-electro-mechanical system （MEMS） device has the advantages of both electronic system and mechanical system. With the development of MEMS devices for satellite, it is possible to establish much lighter and smaller nanosatellites with higher performance and longer lifecyele. The power consumption of MEMS devices is usually much lower than that of traditional devices, which will greatly reduce the consumption of power. For its small size and simple architecture, MEMS devices can be easily integrated together and achieve redundancy. Launched on April 18, 2004, NS - 1 is a nanosatellite for science exploration and MEMS devices test. A mass of science data and images were acquired during its running. NS - 1 weights less than 25 kg. It consists of several MEMS devices, including one miniature inertial measurement unit（MIMU） , three micro complementary metal oxide semiconductor （CMOS）cameras, one sun sensor, three momentum wheels, and one micro magnetic sensor. By applying micro components based on MEMS technology, NS - 1 has made success in the experiments of integrative design, manufacture, and MEMS devices integration. In this paper, some MEMS devices for nanosatellite and picosatellite are introduced, which have been tested on NS -1 nanosatellite or on the ground.

初中物理电学知识的应用

电学知识是初中物理学的重要组成部分,也是物理教学的重点、难点,把握好这一部分內容,对于提高学生的物理成绩具有重要的意义。本文将围绕几个重要的初中物理电学知识点,来谈谈电学知识的学习和应用,从而提高学生对电学知识的掌握。

A highly conductive and stretchable wearable liquid metal electronic skin for long-term conformable health monitoring

Conventional rigid electronics are usually unconformable with soft skins and tend to fail in accurate physiological monitoring and precise treatment. Electronic skins(e-Skins) made by conductive and stretchable materials offer mechanical compliance for fabricating flexible and conformable wearables. Compared to common organic or inorganic conductive materials, gallium-based liquid metals alone own superior conductivity and compliance. Here, we demonstrate a highly conductive and stretchable electronic skin with liquid metal circuits(LMCs) embedded in silicone rubber film, which are functionalized for physiological signals monitoring. Through the designs of serpentine structure, LMCs maintained good electrical conductivity and functionality under over 100% strain. Also, a wearable electrocardiogram(ECG) recording device was fabricated and tested. The device was able to acquire steady signals during real-time measurement of physical activities. The proposed liquid metal e-Skin can be further extended to conformable bio-integrated healthcare devices and intelligent health monitoring networks.

Piezotronic transistors in nonlinear circuit:Model and simulation

For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.

Spin-resolved self-doping tunes the intrinsic halfmetallicity of AIN nanoribbons

We present a first-principles theoretical study of electric field- and straincontrolled intrinsic half-metallic properties of zigzagged aluminium nitride （A1N） nanoribbons. We show that the half-metallic property of AIN ribbons can undergo a transition into fully-metallic or semiconducting behavior with application of an electric field or uniaxial strain. An external transverse electric field induces a full charge screening that renders the material semiconducting. In contrast, as uniaxial strain varies from compressive to tensile, a spin-resolved selective self-doping increases the half-metallic character of the ribbons. The relevant strain-induced changes in electronic properties arise from band structure modifications at the Fermi level as a consequence of a spin-polarized charge transfer between p-orbitals of the N and A1 edge atoms in a spin-resolved self-doping process. This band structure tunability indicates the possibility of designing magnetic nanoribbons with tunable electronic structure by deriving edge states from elements with sufficiently different localization properties. Finite temperature molecular dynamics reveal a thermally stable half-metallic nanoribbon up to room temperature.

Intrinsic superconducting transport properties of ultra-thin Fe_(1+y)Te_(0:6)Se_(0:4) microbridges

We investigated the superconducting properties of Fe_(1+y)Te_(0:6)Se_(0:4) single-crystalline microbridges with a width of 4 m and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistance of the bridges exhibited a type of metalinsulator transition in the normal state. The critical current density(J_c) of the microbridge with a thickness of 136.2 nm was82.3 kA/cm^2 at 3K and reached 105 kA/cm^2 after extrapolation to T = 0 K. The current versus voltage characteristics of the microbridges showed a Josephson-like behavior with an obvious hysteresis. These results demonstrate the potential application of ultra-thin Fe-based microbridges in superconducting electronic devices such as bolometric detectors.